Nanoscale integration of two-dimensional materials by lateral heteroepitaxy

Nano Letters

Volumn 14, Issue 8, 2014, Pages 4846-4851

  Sutter, Peter ^a   Huang, Yuan ^a   Sutter, Eli ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

2D materials; boron nitride; graphene; heteroepitaxy; heterostructure; ruthenium

Indexed keywords

BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GRAPHENE; HETEROJUNCTIONS; NANOTECHNOLOGY; RUTHENIUM;

BOTTOM-UP SYNTHESIS; ENGINEERED STRUCTURES; HETEROSTRUCTURE; NANO-HETEROSTRUCTURES; NANOSCALE FEATURES; NANOSCALE INTEGRATION; TWO-DIMENSIONAL (2D) CRYSTALS; TWO-DIMENSIONAL MATERIALS;

NANOSTRUCTURED MATERIALS;

EID: 84906080923     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl502110q     Document Type: Article

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