Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures

Nature Communications

Volumn 6, Issue , 2015, Pages

  Gao, Teng ^a   Song, Xiuju ^a   Du, Huiwen ^b   Nie, Yufeng ^a   Chen, Yubin ^a   Ji, Qingqing ^a   Sun, Jingyu ^a   Yang, Yanlian ^b   Zhang, Yanfeng ^a,c   Liu, Zhongfan ^a  

^a PEKING UNIVERSITY   (China)

^b NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BENZOIC ACID; BORON; GRAPHENE; GRAPHENE BORON NITRIDE; UNCLASSIFIED DRUG;

BENZENE; BORON; CARBON; ELECTRON; IMAGE RESOLUTION; OPTICAL METHOD; REACTION KINETICS;

ARTICLE; CHEMICAL STRUCTURE; ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SYNTHESIS; TEMPERATURE; VAPOR;

EID: 84928152753     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7835     Document Type: Article

References (47)

1. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004).
2. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200 (2005).
3. Zhang, Y., Tan, Y.-W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201-204 (2005).
4. Kubota, Y., Watanabe, K., Tsuda, O. & Taniguchi, T. Deep ultraviolet lightemitting hexagonal boron nitride synthesized at atmospheric pressure. Science 317, 932-934 (2007).
5. Watanabe, K., Taniguchi, T. & Kanda, H. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nat. Mater. 3, 404-409 (2004).
6. Kho, J.-G., Moon, K.-T., Kim, J.-H. & Kim, D.-P. Properties of boron nitride (BxNy) films produced by the spin-coating process of polyborazine. J. Am. Ceram. Soc. 83, 2681-2683 (2000).
7. Kim, K. K. et al. Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. Nano Lett. 12, 161-166 (2011).
8. Ci, L. et al. Atomic layers of hybridized boron nitride and graphene domains. Nat. Mater. 9, 430-435 (2010).
9. Wang, J., Zhao, R., Liu, Z. & Liu, Z. Widely tunable carrier mobility of boron nitride-embedded graphene. Small 9, 1373-1378 (2013).
10. Shinde, P. P. & Kumar, V. Direct band gap opening in graphene by BN doping: Ab initio calculations. Phys. Rev. B 84, 125401 (2011).
11. Levendorf, M. P. et al. Graphene and boron nitride lateral heterostructures for atomically thin circuitry. Nature 488, 627-632 (2012).
12. Liu, Z. et al. In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes. Nat. Nanotechnol. 8, 119-124 (2013).
13. Sutter, P., Cortes, R., Lahiri, J. & Sutter, E. Interface formation in monolayer graphene-boron nitride heterostructures. Nano Lett. 12, 4869-4874 (2012).
14. Gao, Y. et al. Toward single-layer uniform hexagonal boron nitride-graphene patchworks with zigzag linking edges. Nano Lett. 13, 3439-3443 (2013).
15. Han, G. H. et al. Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition. ACS Nano 7, 10129-10138 (2013).
16. Liu, L. et al. Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges. Science 343, 163-167 (2014).
17. Dean, C. R. et al. Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices. Nature 497, 598-602 (2013).
18. Ponomarenko, L. A. et al. Cloning of Dirac fermions in graphene superlattices. Nature 497, 594-597 (2013).
19. Hunt, B. et al. Massive Dirac fermions and Hofstadter Butterfly in a van der Waals heterostructure. Science 340, 1427-1430 (2013).
20. Yang, W. et al. Epitaxial growth of single-domain graphene on hexagonal boron nitride. Nat. Mater. 12, 792-797 (2013).
21. Kim, S. M. et al. Synthesis of Patched or Stacked Graphene and hBN Flakes: a route to hybrid structure discovery. Nano Lett. 13, 933-941 (2013).
22. Wang, M. et al. A platform for large-scale graphene electronics-CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride. Adv. Mater. 25, 2746-2752 (2013).
23. Santrock, J. & Hayes, J. M. Pyrolytic decarboxylation of aromatic acids as a means of isotopic analysis. Anal. Chem. 57, 1441-1443 (1985).
24. Ishigami, M., Chen, J. H., Cullen, W. G., Fuhrer, M. S. & Williams, E. D. Atomic structure of graphene on SiO2. Nano Lett. 7, 1643-1648 (2007).
25. Sutter, P., Huang, Y. & Sutter, E. Nanoscale integration of two-dimensional materials by lateral heteroepitaxy. Nano Lett. 14, 4846-4851 (2014).
26. Wei, D. et al. Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties. Nano Lett. 9, 1752-1758 (2009).
27. Wang, H. et al. Synthesis of boron-doped graphene monolayers using the sole solid feedstock by chemical vapor deposition. Small 9, 1316-1320 (2013).
28. Shi, Y., Dong, X., Chen, P., Wang, J. & Li, L.-J. Effective doping of single-layer graphene from underlying SiO2 substrates. Phys. Rev. B 79, 115402 (2009).
29. Joshi, P., Romero, H. E., Neal, A. T., Toutam, V. K. & Tadigadapa, S. A. Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO 2 substrates. J. Phys. Condens. Matter 22, 334214 (2010).
30. Lafkioti, M. et al. Graphene on a hydrophobic substrate: doping reduction and hysteresis suppression under ambient conditions. Nano Lett. 10, 1149-1153 (2010).
31. Li, Q. et al. Growth of adlayer graphene on Cu studied by carbon isotope labeling. Nano Lett. 13, 486-490 (2013).
32. Fang, W. et al. Rapid identification of stacking orientation in isotopically labeled chemical-vapor grown bilayer graphene by Raman spectroscopy. Nano Lett. 13, 1541-1548 (2013).
33. Liu, L. et al. Graphene oxidation: thickness-dependent etching and strong chemical doping. Nano Lett. 8, 1965-1970 (2008).
34. Wang, L. et al. Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors. Adv. Mater. 26, 1559-1564 (2014).
35. Sutter, P., Lahiri, J., Zahl, P., Wang, B. & Sutter, E. Scalable synthesis of uniform few-layer hexagonal boron nitride dielectric films. Nano Lett. 13, 276-281 (2012).
36. Paffett, M. T., Simonson, R. J., Papin, P. & Paine, R. T. Borazine adsorption and decomposition at Pt(111) and Ru(001) surfaces. Surf. Sci. 232, 286-296 (1990).
37. Burnett, T., Yakimova, R. & Kazakova, O. Mapping of local electrical properties in epitaxial graphene using electrostatic force microscopy. Nano Lett. 11, 2324-2328 (2011).
38. Datta, S. S., Strachan, D. R. & Mele, E. J. Johnson ATC. Surface potentials and layer charge distributions in few-layer graphene films. Nano Lett. 9, 7-11 (2008).
39. Cho, J. et al. Atomic-scale investigation of graphene grown on Cu foil and the effects of thermal annealing. ACS Nano 5, 3607-3613 (2011).
40. Bokdam, M., Khomyakov, P. A., Brocks, G., Zhong, Z. & Kelly, P. J. Electrostatic doping of graphene through ultrathin hexagonal boron nitride films. Nano Lett. 11, 4631-4635 (2011).
41. Joshi, S. et al. Boron nitride on Cu(111): an electronically corrugated monolayer. Nano Lett. 12, 5821-5828 (2012).
42. Wang, M. et al. Catalytic transparency of hexagonal boron nitride on copper for chemical vapor deposition growth of large-area and high-quality graphene. ACS Nano 8, 5478-5483 (2014).
43. Drost, R. et al. Electronic states at the graphene-hexagonal boron nitride zigzag interface. Nano Lett. 14, 5128-5132 (2014).
44. Park, J. et al. Spatially resolved one-dimensional boundary states in graphene- hexagonal boron nitride planar heterostructures. Nat. Commun. 5, 5403 (2014).
45. Liu, M. et al. Quasi-freestanding monolayer heterostructure of graphene and hexagonal boron nitride on Ir(111) with a zigzag boundary. Nano Lett. 14, 6342-6347 (2014).
46. Yankowitz, M. et al. Emergence of superlattice Dirac points in graphene on hexagonal boron nitride. Nat. Phys. 8, 382-386 (2012).
47. Roth, S., Matsui, F., Greber, T. & Osterwalder, J. Chemical vapor deposition and characterization of aligned and incommensurate graphene/hexagonal boron nitride heterostack on Cu(111). Nano Lett. 13, 2668-2675 (2013).