SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 18, 2011, Pages

Fast transient charging at the graphene/ SiO2 interface causing hysteretic device characteristics

(9) Lee, Young Gon a Kang, Chang Goo a Jung, Uk Jin a Kim, Jin Ju a Hwang, Hyeon Jun a Chung, Hyun Jong b Seo, Sunae c Choi, Rino d Lee, Byoung Hun a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Sejong University (South Korea)

d Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE; DIRAC POINT; FAST TRANSIENTS; GRAPHENE DEVICES; HYSTERETIC BEHAVIOR; HYSTERETIC DEVICES; MEASUREMENT METHODS; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SHORT PULSE; TRAPPING TIME;

CHARGE TRAPPING; GRAPHENE; HYSTERESIS; SILICON COMPOUNDS; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79957452503 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3588033 Document Type: Article

Times cited : (141)

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