Erratum: Catalytic transparency of hexagonal boron nitride on copper for chemical vapor deposition growth of large-area and high-quality graphene (ACS Nano (2014) 8 (5478-5483) DOI: 10.1021/nn501837c);Catalytic transparency of hexagonal boron nitride on copper for chemical vapor deposition growth of large-area and high-quality graphene

ACS Nano

Volumn 8, Issue 6, 2014, Pages 5478-5483

  Wang, Min ^a,b   Kim, Minwoo ^a,b   Odkhuu, Dorj ^c   Park, Noejung ^c   Lee, Joohyun ^a,b   Jang, Won Jun ^d   Kahng, Se Jong ^d   Ruoff, Rodney S ^c   Song, Young Jae ^a,b   Lee, Sungjoo ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Ulsan National Institute of Science and Technology   (South Korea)

^d Korea University   (South Korea)

Author keywords

catalytic transparency; CVD growth mechanism; direct CVD growth; graphene; h BN; ideal CVD template

Indexed keywords

BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; COPPER; DENSITY FUNCTIONAL THEORY; GRAPHENE; III-V SEMICONDUCTORS; METAL CLADDING; TRANSPARENCY;

CVD GROWTHS; FOCUS OF RESEARCHES; H-BN; HEXAGONAL BORON NITRIDE; IDEAL CVD TEMPLATE; KELVIN PROBE FORCE MICROSCOPY; LARGE AREA DEVICES; LARGE-AREA GRAPHENE;

FILM GROWTH;

EID: 84903445600     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503982j     Document Type: Erratum

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