Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

Nature Communications

Volumn 6, Issue , 2015, Pages

  Tang, Shujie ^a,b   Wang, Haomin ^a   Wang, Hui Shan ^a,c   Sun, Qiujuan ^a,c   Zhang, Xiuyun ^d   Cong, Chunxiao ^e   Xie, Hong ^a   Liu, Xiaoyu ^a   Zhou, Xiaohao ^f   Huang, Fuqiang ^g   Chen, Xiaoshuang ^f   Yu, Ting ^e   Ding, Feng ^d   Xie, Xiaoming ^a,h   Jiang, Mianheng ^a,h  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c CENTRAL SOUTH UNIVERSITY   (China)

^d HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^e NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^f SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^g SHANGHAI INSTITUTE OF CERAMICS   (China)

^h SHANGHAITECH UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BORON DERIVATIVE; CRYSTALLIN; GRAPHENE; HEXAGONAL BORON NITRIDE; SILANE; UNCLASSIFIED DRUG;

BORON; CATALYSIS; CRYSTAL STRUCTURE; DIELECTRIC PROPERTY; GROWTH RATE; SUBSTRATE;

ARTICLE; CATALYSIS; CATALYST; CHEMICAL VAPOR DEPOSITION; CONTROLLED STUDY; CRYSTAL STRUCTURE; DIELECTRIC CONSTANT; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; GAS; GROWTH RATE; MAGNETIC FIELD; MEASUREMENT; MOLECULAR ELECTRONICS; ROOM TEMPERATURE; SYNTHESIS; VAPORIZATION;

EID: 84924756407     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7499     Document Type: Article

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