Disorder and segregation in B-C-N graphene-type layers and nanotubes: Tuning the band gap

ACS Nano

Volumn 5, Issue 1, 2011, Pages 385-393

  Da Rocha Martins, Jonathan ^a,b   Chacham, Hélio ^b  

^a FEDERAL UNIVERSITY OF PIAUÍ   (Brazil)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

B C N; Band gap; Electronic properties; Graphene; Monolayer h BNC; Monolayer hexagonal BN; Nanotubes; Structural properties

Indexed keywords

ANNEALING PROCESS; B-C-N; BAND GAPS; FIRST-PRINCIPLES; POSITIONAL DISORDER;

ATOMS; BORON; BORON COMPOUNDS; ELECTRONIC PROPERTIES; ENERGY GAP; GRAPHENE; GROWTH KINETICS; MATERIALS PROPERTIES; MONOLAYERS; NANOTUBES; OPTICAL PROPERTIES; STOICHIOMETRY;

SIMULATED ANNEALING;

EID: 79957793983     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn101809j     Document Type: Article

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