Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2

Nano Letters

Volumn 14, Issue 5, 2014, Pages 2381-2386

  Nguyen, Linh Nam ^a,b   Lan, Yann Wen ^a,c   Chen, Jyun Hong ^d   Chang, Tay Rong ^e   Zhong, Yuan Liang ^d   Jeng, Horng Tay ^a,e   Li, Lain Jong ^c   Chen, Chii Dong ^a  

^a INSTITUTE OF PHYSICS   (Taiwan)

^b THE UNIVERSITY OF DANANG   (Viet Nam)

^c ACADEMIA SINICA   (Taiwan)

^d CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^e NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

discrete energy levels; interlayer electron transport; Metal transition dichalcogenide; nanopore structure; resonant tunneling

Indexed keywords

ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; QUANTUM THEORY; RESONANT TUNNELING;

DISCRETE ENERGY LEVELS; ELECTRON TRANSPORT; ELECTRONIC STRUCTURE CALCULATIONS; METAL TRANSITION; PERPENDICULAR MAGNETIC FIELDS; PHYSICAL PHENOMENA; TWO-DIMENSIONAL CRYSTALS;

MOLYBDENUM COMPOUNDS;

EID: 84900506644     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl404790n     Document Type: Article

References (43)

1. Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V.; Peres, N. M. R.; Leist, J.; Geim, A. K.; Novoselov, K. S.; Ponomarenko, L. A. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures Science 2012, 335, 947
2. 2 heterostructures for flexible and transparent electronics Nat. Nanotechnol. 2013, 8, 100-103
3. 2 Nested Inorganic Fullerenes and Nanotubes Science 1995, 267, 222
4. 2 Nano Lett. 2010, 10, 1271-1275
5. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
6. 2: Evolution of Raman Scattering Adv. Funct. Mater. 2012, 22, 1385-1390
7. 2: On Demand Generation of a Single-Layer Semiconductor Nano Lett. 2012, 12, 3187-3192
8. 2 transistors Nat. Nanotechnol. 2011, 6, 147-150
9. 2 phototransistors ACS Nano 2012, 6, 74-80
10. 2 Thin FlakeTransistors Nano Lett. 2012, 12, 1136-1140
11. 2 ACS Nano 2011, 5, 9934-9938
12. 2 Transistors Be? Nano Lett. 2011, 11, 3768-3773
13. 2 Thin-Film Transistors with Ion Gel Dielectrics Nano Lett. 2012, 12, 4013-4017
14. 2 Nanosheets: Characterization, Properties, and Sensing Applications Small 2012, 8, 2264-2270
15. 2 Transistors Nano Lett. 2012, 12, 4674-4680
16. 2 from first principles Phys. Rev. B 2012, 85, 115317
17. Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.; Novoselov, K. S.; Geim, A. K. The electronic properties of grapheme Rev. Mod. Phys. 2009, 81, 109
18. Li, Z. Q.; Henriksen, E. A.; Jiang, Z.; Hao, Z.; Martin, M. C.; Kim, P.; Stormer, H. L.; Basov, D. N. Band Structure Asymmetry of Bilayer Graphene Revealed by Infrared Spectroscopy Phys. Rev. Lett. 2009, 102, 037403
19. Sui, Y.; Appenzeller, J. Screening and Interlayer Coupling in Multilayer Graphene Field-Effect-Transistors Nano Lett. 2009, 9, 2973-2977
20. Zhang, Y.; Tang, T. T.; Girit, C.; Hao, Z.; Martin, M. C.; Zettl, A.; Crommie, M. F.; Shen, Y. R.; Wang, F. Direct observation of a widely tunable bandgap in bilayer graphene Nature 2009, 459, 820
21. Ramasubramaniam, A. Tunable Band Gaps in Bilayer Graphene-BN Heterostructures Nano Lett. 2011, 11, 1070-1075
22. Lee, Y. H.; Kim, Y. J.; Lee, J. H. Vertical conduction behavior through atomic graphene device under transverse electric field Appl. Phys. Lett. 2011, 98, 133112
23. Liao, Z. M.; Wu, H. C.; Kumar, S.; Duesberg, G. S.; Zhou, Y. B.; Cross, G. L. W.; Shvets, I. V.; Yu, D. P. Large Magnetoresistance in Few Layer Graphene Stacks with Current Perpendicular to Plane Geometry Adv. Mater. 2012, 24, 1862-1866
24. Ramasubramaniam, A.; Naveh, D.; Towe, E. Tunable band gaps in bilayer transition-metal dichalcogenides Phys. Rev. B 2012, 84, 205325
25. 2 Thin Layers on Insulating Substrates Nano Lett. 2012, 12, 1538-1544
26. 2 Atomic Layers with Chemical Vapor Deposition Adv. Mater. 2012, 24, 2320-2325
27. 2 field-effect transistor and the effect of ambient on their performances Appl. Phys. Lett. 2012, 100, 123104-1-3
28. Nguyen, L. N.; Lin, M. C.; Chen, H. S.; Lan, Y. W.; Wu, C. S.; Chang-Liao, K. S.; Chen, C. D. Photo-response of a nanopore device with a single embedded ZnO nanoparticle Nanotechnology 2012, 23, 165201
29. Reed, M. A.; Zhou, C.; Deshpande, M. R.; Muller, C. J.; Burgin, T. P.; Jones, L., II; Tour, J. M. The Electrical Measurement of Molecular Junctions Ann. N. Y. Acad. Sci. 1998, 852, 133
30. Liao, Z. M.; Liu, K. J.; Zhang, J. M.; Xu, J.; Yu, D. P. Photovoltaic effect and charge storage in single ZnO nanowires Appl. Phys. Lett. 2008, 93, 023111
31. Fan, Z.; Lu, J. G. Electrical properties of ZnO nanowire field effect transistors characterized with scanning probes Appl. Phys. Lett. 2005, 86, 032111
32. Schmidt, O. G.; Denker, U.; Eberl, K.; Kienzle, O.; Ernst, F.; Haug, R. J. Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands Appl. Phys. Lett. 2000, 77, 4341
33. 1- x quantum-well structures Phys. Rev. B 1991, 43, 2280
34. 2-Based Structures in Hydrotreating Catalysts J. Phys. Chem. B 2005, 109, 2245
35. 2 Field-Effect Transistors ACS Nano 2011, 5, 7707-7712
36. Smit, G. D. J.; Rogge, S.; Klapwijk, T. M. Enhanced tunneling across nanometer-scale metal-semiconductor interfaces Appl. Phys. Lett. 2002, 80, 2568
37. Kraya, R. A.; Kraya, L. Y. The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces J. Appl. Phys. 2012, 111, 064302
38. Han, S. Y.; Lee, J. L.; Pearton, S. J. Electrical properties of nanoscale Au contacts on 4H-SiC J. Vac. Sci. Technol. B 2009, 27, 1870
39. Britnell, L.; Gorbachev, R. V.; Geim, A. K.; Ponomarenko, L. A.; Mishchenko, A.; Greenaway, M. T.; Fromhold, T. M.; Novoselov, K. S.; Eaves, L. Resonant tunnelling and negative differential conductance in graphene transistors Nat. Commun. 2013, 4:1794, 1-5
40. Nguyen, H. S.; Vishnevsky, D.; Sturm, C.; Tanese, D.; Solnyshkov, D.; Galopin, E.; Lemaître, A.; Sagnes, I.; Amo, A.; Malpuech, G.; Bloch, J. Realization of a Double-Barrier Resonant Tunneling Diode for Cavity Polaritons Phys. Rev. Lett. 2013, 110, 236601
41. 2 trilayers Phys. Rev. Lett. 2013, 110, 066803
42. 2 J. Phys. C: Solid State Phys. 1974, 7, 1247
43. 2 Phys. Rev. B 2012, 86, 241401(R)