Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide

Nature Communications

Volumn 6, Issue , 2015, Pages

  Li, Hua Min ^a,b   Lee, Daeyeong ^a   Qu, Deshun ^a   Liu, Xiaochi ^a   Ryu, Jungjin ^a   Seabaugh, Alan ^b   Yoo, Won Jong ^a  

^a Sungkyunkwan University   (South Korea)

^b University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENZYLVIOLOGEN; MOLYBDENUM COMPLEX; MOLYBDENUM DISULFIDE; UNCLASSIFIED DRUG;

ELECTRICAL CONDUCTIVITY; MOLYBDENUM; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CRYSTAL; ELECTRODE; ELECTRON; ELECTRON TRANSPORT; FIELD EFFECT TRANSISTOR; MICROSCOPY; SEMICONDUCTOR; THICKNESS;

EID: 84925357684     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7564     Document Type: Article

References (45)

1. Hsu, A. et al. Large-area 2-D electronics: materials, technology, and devices. Proc. IEEE 101, 1638-1652 (2013).
2. Jena, D. Tunneling transistors based on graphene and 2-D crystals. Proc. IEEE 101, 1585-1602 (2013).
3. Butler, S. Z. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7, 2898-2926 (2013).
4. Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat. Mater. 6, 183-191 (2007).
5. Schwierz, F. Graphene transistors. Nat. Nanotech. 5, 487-496 (2010).
6. Bonaccorso, F., Sun, Z., Hasan, T. & Ferrari, A. C. Graphene photonics and optoelectronics. Nat. Photon. 4, 611-622 (2010).
7. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotech. 5, 722-726 (2010).
8. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033-4041 (2014).
9. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotech. 9, 372-377 (2014).
10. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotech. 7, 699-712 (2012).
11. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263-275 (2013).
12. Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J. & Hersam, M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 8, 1102-1120 (2014).
13. Britnell, L. et al. Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 947-950 (2012).
14. 2 nanoribbon p-n juncitons. IEEE Trans. Electron Devices 60, 274-279 (2013).
15. 2 MOSFETs. ACS Nano 6, 8563-8569 (2012).
16. 2 nanoribbon transistors: transition from depletion mode to enhancement mode by channel-width trimming. IEEE Electron Device Lett. 33, 1273-1275 (2012).
17. 2 field-effect transistors at the scaling limit. IEEE Trans. Electron Devices 60, 4133-4139 (2013).
18. 2 transistor be? Nano Lett. 11, 3768-3773 (2011).
19. Choi, M. S. et al. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nat. Commun. 4, 1624 (2013).
20. 2/graphene heterostructures. ACS Nano 7, 3246-3252 (2013).
21. 2 hybrid stuctures for multifunctional photoresonsive memory devices. Nat. Nanotech. 8, 826-830 (2013).
22. 2 phototransistors. ACS Nano 6, 74-80 (2012).
23. 2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 12, 3695-3700 (2012).
24. 2. Nat. Nanotech. 8, 497-501 (2013).
25. Yu, W. J. et al. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat. Nanotech. 8, 952-958 (2013).
26. 2. Nano Lett. 13, 1416-1421 (2013).
27. Lopez-Sanchez, O. et al. Light generation and harvesting in a van der Waals heterostructure. ACS Nano 8, 3042-3048 (2014).
28. 2. ACS Nano 5, 9934-9938 (2011).
29. 2 transistors. Nano Lett. 12, 4674-4680 (2012).
30. 2 nanoflakes by functional self-assembled monolayers. ACS Nano 7, 7795-7804 (2013).
31. 2 field effect transistor by surface overlayers. Appl. Phys. Lett. 103, 063109 (2013).
32. 2 field-effect transistors: substrate and dielectric effects. Appl. Phys. Lett. 102, 042104 (2013).
33. 2. Appl. Phys. Lett. 103, 113505 (2013).
34. 2 crystals. Nat. Commun. 3, 1011 (2012).
35. Shin, H.-J. et al. Control of electronic structure of graphene by various dopants and their effects on a nanogenerator. J. Am. Chem. Soc. 132, 15603-15609 (2010).
36. 2 field-effect transistors: reduction in sheet and contact resistances. IEEE Electron Device Lett. 34, 1328-1330 (2013).
37. 2 p-n junction formed by chemical doping for use in high-performance optoelectronics. ACS Nano 8, 9332-9340 (2014).
38. Li, H.-M. et al. Metal-semiconductor barrier modulaiton for high photoresponse in transition metal dichalcogenide field effect transistors. Sci. Rep. 4, 4041 (2014).
39. Li, H.-M. et al. in IEEE International Electron Devices Meeting (IEDM) 507-510 IEEE, (2013).
40. Shanmugam, M., Durcan, C. A. & Yu, B. Layered semiconductor molybdenum disulfide nanomembrane based Schottky-barrier solar cells. Nanoscale 4, 7399-7405 (2012).
41. Bernardi, M., Palummo, M. & Grossman, J. C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 13, 3664-3670 (2013).
42. Furchi, M. M., Pospischil, A., Libisch, F., Burgdorfer, J. & Muller, T. Photovoltaic effect in an electrically tunable van der Waals heterojunction. Nano Lett. 14, 4785-4791 (2014).
43. 2 heterojunction solar cells. ACS Nano 8, 8317-8322 (2014).
44. Ikuno, T. et al. Electron transport properties of Si nanosheets: transition from direct tunneling to Fowler-Nordheim tunneling. Appl. Phys. Lett. 99, 023107 (2011).
45. Lee, G.-H. et al. Electron tunneling through atomically flat and ultratin hexagonal boron nitride. Appl. Phys. Lett. 99, 243114 (2011).