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Volumn 4, Issue , 2014, Pages

Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

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EID: 84905909649     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep05951     Document Type: Article
Times cited : (145)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.