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Nanoscale

Volumn 7, Issue 37, 2015, Pages 15127-15133

Metal-insulator crossover in multilayered MoS2

(4) Park, Min Ji a Yi, Sum Gyun a Kim, Joo Hyung a Yoo, Kyung Hwa a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; LAYERED SEMICONDUCTORS; METAL INSULATOR BOUNDARIES; METALS; MICROWAVE INTEGRATED CIRCUITS; MOLYBDENUM COMPOUNDS; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE;

ELECTRICAL TRANSPORT PROPERTIES; FINITE TEMPERATURES; GATE VOLTAGES; METAL-INSULATOR CROSSOVER; MULTI-LAYERED; SEMICONDUCTING BEHAVIOR; TEMPERATURE DEPENDENCE; ZERO GATE;

SULFUR COMPOUNDS;

EID: 84942156185 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr05223h Document Type: Article

Times cited : (18)

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