-
1
-
-
83555163728
-
Electrical Contacts to One- and Two-Dimensional Nanomaterials
-
Leonard, F.; Talin, A. A. Electrical Contacts to One- and Two-Dimensional Nanomaterials Nat. Nanotechnol. 2011, 6, 773-783
-
(2011)
Nat. Nanotechnol.
, vol.6
, pp. 773-783
-
-
Leonard, F.1
Talin, A.A.2
-
2
-
-
0037255711
-
Metal Silicides in CMOS Technology: Past, Present, and Future Trends
-
Zhang, S. L.; Östling, M. Metal Silicides in CMOS Technology: Past, Present, and Future Trends Crit. Rev. Solid State Mater. Sci. 2003, 28, 1-129
-
(2003)
Crit. Rev. Solid State Mater. Sci.
, vol.28
, pp. 1-129
-
-
Zhang, S.L.1
Östling, M.2
-
3
-
-
77955231284
-
Graphene Transistors
-
Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 487-496
-
-
Schwierz, F.1
-
5
-
-
84879882443
-
Graphene Transistors: Status, Prospects, and Problems
-
Schwierz, F. Graphene Transistors: Status, Prospects, and Problems Proc. IEEE 2013, 101, 1567-1584
-
(2013)
Proc. IEEE
, vol.101
, pp. 1567-1584
-
-
Schwierz, F.1
-
9
-
-
84880179070
-
Where Does the Current Flow in Two-Dimensional Layered Systems?
-
Das, S.; Appenzeller, J. Where Does the Current Flow in Two-Dimensional Layered Systems? Nano Lett. 2013, 13, 3396-3402
-
(2013)
Nano Lett.
, vol.13
, pp. 3396-3402
-
-
Das, S.1
Appenzeller, J.2
-
13
-
-
0032050851
-
Valence-Band Offsets and Schottky Barrier Heights of Layered Semiconductors Explained by Interface-Induced Gap States
-
Monch, W. Valence-Band Offsets and Schottky Barrier Heights of Layered Semiconductors Explained by Interface-Induced Gap States Appl. Phys. Lett. 1998, 72, 1899-1901
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 1899-1901
-
-
Monch, W.1
-
14
-
-
84893478331
-
Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers
-
Liu, H.; Si, M.; Deng, Y.; Neal, A. T.; Du, Y.; Najmaei, S.; Ajayan, P. M.; Lou, J.; Ye, P. D. Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers ACS Nano 2014, 8, 1031-1038
-
(2014)
ACS Nano
, vol.8
, pp. 1031-1038
-
-
Liu, H.1
Si, M.2
Deng, Y.3
Neal, A.T.4
Du, Y.5
Najmaei, S.6
Ajayan, P.M.7
Lou, J.8
Ye, P.D.9
-
17
-
-
84880154581
-
2 Transistors with Ferromagnetic Contacts
-
2 Transistors with Ferromagnetic Contacts Nano Lett. 2013, 13, 3106-3110
-
(2013)
Nano Lett.
, vol.13
, pp. 3106-3110
-
-
Chen, J.R.1
Odenthal, P.M.2
Swartz, A.G.3
Floyd, G.C.4
Wen, H.5
Luo, K.Y.6
Kawakami, R.K.7
-
18
-
-
84863855836
-
2 p-FETs with Chemically Doped Contacts
-
2 p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792
-
(2012)
Nano Lett.
, vol.12
, pp. 3788-3792
-
-
Fang, H.1
Chuang, S.2
Chang, T.C.3
Takei, K.4
Takahashi, T.5
Javey, A.6
-
19
-
-
84859603673
-
2: Evolution of Raman Scattering
-
2: Evolution of Raman Scattering Adv. Funct. Mater. 2012, 22, 1385-1390
-
(2012)
Adv. Funct. Mater.
, vol.22
, pp. 1385-1390
-
-
Li, H.1
Zhang, Q.2
Yap, C.C.R.3
Tay, B.K.4
Edwin, T.H.T.5
Olivier, A.6
Baillargeat, D.7
-
20
-
-
0036540852
-
A Review of Recent MOSFET Threshold Voltage Extraction Methods
-
Ortiz-Conde, A.; García Sánchez, F. J.; Liou, J. J.; Cerdeira, A.; Estrada, M.; Yue, Y. A Review of Recent MOSFET Threshold Voltage Extraction Methods Microelectron. Reliab. 2002, 42, 583-596
-
(2002)
Microelectron. Reliab.
, vol.42
, pp. 583-596
-
-
Ortiz-Conde, A.1
García Sánchez, F.J.2
Liou, J.J.3
Cerdeira, A.4
Estrada, M.5
Yue, Y.6
-
21
-
-
79952445612
-
The Origins and Limits of Metal-Graphene Junction Resistance
-
Xia, F.; Perebeinos, V.; Lin, Y. M.; Wu, Y.; Avouris, P. The Origins and Limits of Metal-Graphene Junction Resistance Nat. Nanotechnol. 2011, 6, 179-184
-
(2011)
Nat. Nanotechnol.
, vol.6
, pp. 179-184
-
-
Xia, F.1
Perebeinos, V.2
Lin, Y.M.3
Wu, Y.4
Avouris, P.5
-
22
-
-
79955873818
-
Nanoscale Joule Heating, Peltier Cooling and Current Crowding at Graphene-Metal Contacts
-
Grosse, K. L.; Bae, M.-H.; Lian, F.; Pop, E.; King, W. P. Nanoscale Joule Heating, Peltier Cooling and Current Crowding at Graphene-Metal Contacts Nat. Nanotechnol. 2011, 6, 287-290
-
(2011)
Nat. Nanotechnol.
, vol.6
, pp. 287-290
-
-
Grosse, K.L.1
Bae, M.-H.2
Lian, F.3
Pop, E.4
King, W.P.5
-
23
-
-
77958023479
-
Contact Resistivity and Current Flow Path at Metal/Graphene Contact
-
Nagashio, K.; Nishimura, T.; Kita, K.; Toriumi, A. Contact Resistivity and Current Flow Path at Metal/Graphene Contact Appl. Phys. Lett. 2010, 97, 143514
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 143514
-
-
Nagashio, K.1
Nishimura, T.2
Kita, K.3
Toriumi, A.4
-
25
-
-
79951491418
-
Contacting Graphene
-
Robinson, J. A.; LaBella, M.; Zhu, M.; Hollander, M.; Kasarda, R.; Hughes, Z.; Trumbull, K.; Cavalero, R.; Snyder, D. Contacting Graphene Appl. Phys. Lett. 2011, 98, 053103
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 053103
-
-
Robinson, J.A.1
Labella, M.2
Zhu, M.3
Hollander, M.4
Kasarda, R.5
Hughes, Z.6
Trumbull, K.7
Cavalero, R.8
Snyder, D.9
-
26
-
-
75749109747
-
Contact Resistance in Few and Multilayer Graphene Devices
-
Venugopal, A.; Colombo, L.; Vogel, E. M. Contact Resistance in Few and Multilayer Graphene Devices Appl. Phys. Lett. 2010, 96, 013512
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 013512
-
-
Venugopal, A.1
Colombo, L.2
Vogel, E.M.3
-
29
-
-
84891356833
-
2
-
2 ACS Nano 2013, 7, 11350-11357
-
(2013)
ACS Nano
, vol.7
, pp. 11350-11357
-
-
Gong, C.1
Huang, C.2
Miller, J.3
Cheng, L.4
Hao, Y.5
Cobden, D.6
Kim, J.7
Ruoff, R.S.8
Wallace, R.M.9
Cho, K.10
-
30
-
-
84883252748
-
2 Sheet
-
2 Sheet ACS Nano 2013, 7, 7126-7131
-
(2013)
ACS Nano
, vol.7
, pp. 7126-7131
-
-
Hui, Y.Y.1
Liu, X.2
Jie, W.3
Chan, N.Y.4
Hao, J.5
Hsu, Y.-T.6
Li, L.-J.7
Guo, W.8
Lau, S.P.9
-
31
-
-
84862893246
-
Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains
-
Johari, P.; Shenoy, V. B. Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains ACS Nano 2012, 6, 5449-5456
-
(2012)
ACS Nano
, vol.6
, pp. 5449-5456
-
-
Johari, P.1
Shenoy, V.B.2
-
32
-
-
84893465925
-
High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts
-
Dankert, A.; Langouche, L.; Kamalakar, M. V.; Dash, S. P. High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts ACS Nano 2014, 8, 476-482
-
(2014)
ACS Nano
, vol.8
, pp. 476-482
-
-
Dankert, A.1
Langouche, L.2
Kamalakar, M.V.3
Dash, S.P.4
-
33
-
-
79951840727
-
Visibility of Dichalcogenide Nanolayers
-
Benameur, M. M.; Radisavljevic, B.; Héron, J. S.; Sahoo, S.; Berger, H.; Kis, A. Visibility of Dichalcogenide Nanolayers Nanotechnology 2011, 22, 125706
-
(2011)
Nanotechnology
, vol.22
, pp. 125706
-
-
Benameur, M.M.1
Radisavljevic, B.2
Héron, J.S.3
Sahoo, S.4
Berger, H.5
Kis, A.6
-
34
-
-
77952896966
-
2
-
2 ACS Nano 2010, 4, 2695-2700
-
(2010)
ACS Nano
, vol.4
, pp. 2695-2700
-
-
Lee, C.1
Yan, H.2
Brus, L.E.3
Heinz, T.F.4
Hone, J.5
Ryu, S.6
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