Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors

ACS Applied Materials and Interfaces

Volumn 7, Issue 23, 2015, Pages 12850-12855

  Tsai, Meng Yen ^a   Tarasov, Alexey ^a   Hesabi, Zohreh R ^a   Taghinejad, Hossein ^b   Campbell, Philip M ^a   Joiner, Corey A ^a   Adibi, Ali ^b   Vogel, Eric M ^a  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

field effect transistor; flexible electronics; gauge factor; piezoresistive strain sensing; TMDC; transition metal dichalcogenide; wafer scale MoS2

Indexed keywords

ENERGY CONVERSION; ENERGY GAP; FLEXIBLE ELECTRONICS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; SULFUR COMPOUNDS; TRANSITION METALS;

GAUGE FACTORS; STRAIN SENSING; TMDC; TRANSITION METAL DICHALCOGENIDES; WAFER SCALE;

FIELD EFFECT TRANSISTORS;

EID: 84934986158     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b02336     Document Type: Article

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