Evidence for giant piezoresistance effect in n-type silicon nanowire field-effect transistors

Applied Physics Letters

Volumn 100, Issue 16, 2012, Pages

  Kang, Ting Kuo ^a  

^a CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE BIAS; ELECTROMECHANICAL RESPONSE; EXPERIMENTAL EVIDENCE; MECHANICAL STRAIN; N TYPE SILICON; PIEZORESISTANCE; PIEZORESISTANCE EFFECTS; RELEASED STRAIN; REPEATED CYCLE; SILICON ON INSULATOR WAFERS; SUBTHRESHOLD;

FIELD EFFECT TRANSISTORS;

NANOWIRES;

EID: 84859980547     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704564     Document Type: Article

References (15)

1. C. S. Smith, Phys. Rev. 94, 42 (1954). 10.1103/PhysRev.94.42
2. C. Herring and E. Vogt, Phys. Rev. 101, 944 (1956). 10.1103/PhysRev.101. 944
3. R. He and P. Yang, Nat. Nanotechnol. 1, 42 (2006). 10.1038/nnano.2006.53
4. K. Reck, J. Richter, O. Hansen, and E. V. Thomsen, in Proceedings of the 2008 IEEE Conference on Microelectromechanical Systems (IEEE, New York, 2008), p. 717.
5. J. S. Milne, A. C. H. Rowe, S. Arscott, and Ch. Renner, Phys. Rev. Lett. 105, 226802 (2010). 10.1103/PhysRevLett.105.226802
6. A. Koumela, D. Mercier, C. Dupre, G. Jourdan, C. Marcoux, E. Ollier, S. T. Purcell, and L. Duraffourg, Nanotechnology 22, 395701 (2011). 10.1088/0957-4484/22/39/395701
7. A. C. H. Rowe, Nat. Nanotechnol. 3, 311 (2008). 10.1038/nnano.2008.108
8. Y. Yang and X. Li, Nanotechnology 22, 015501 (2011). 10.1088/0957-4484/ 22/1/015501
9. Y. Yang and X. Li, IEEE Electron Device Lett. 32, 411 (2011). 10.1109/LED.2010.2098388
10. T. K. Kang, Measurement 44, 871 (2011). 10.1016/j.measurement.2011.02.019
11. J. C. Suhling and R. C. Jaeger, IEEE Sens. J. 1, 14 (2001). 10.1109/JSEN.2001.923584
12. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New York, 2005).
13. V. Schmidt, S. Senz, and U. Gosele, Appl. Phys. A 86, 187 (2007). 10.1007/s00339-006-3746-2
14. J. T. Park, J. Y. Kim, and M. S. Islam, IEEE Trans. Nanotechnol. 10, 1004 (2011). 10.1109/TNANO.2010.2094203
15. P. Neuzil, C. C. Wong, and J. Reboud, Nano Lett. 10, 1248 (2010). 10.1021/nl9037856