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Volumn 89, Issue 8, 2014, Pages

Donor and acceptor levels in semiconducting transition-metal dichalcogenides

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Indexed keywords


EID: 84897696046     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.89.081406     Document Type: Article
Times cited : (49)

References (32)
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    • The values of the correction for a defect in the middle of the slab, at the interface, and on the surface were 0.19, 0.21, and 0.19 eV, respectively, for MoS 2 and 0.19, 0.21, and 0.16 eV, respectively, for WS 2
    • The values of the correction for a defect in the middle of the slab, at the interface, and on the surface were 0.19, 0.21, and 0.19 eV, respectively, for MoS 2 and 0.19, 0.21, and 0.16 eV, respectively, for WS 2.
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    • The value of E v obtained from the band structure of the pristine supercell is usually corrected by alignment of the average electrostatic potentials [32]. However, since in this case a great fraction of the supercell was occupied by vacuum the alignment term was found to be negligible
    • The value of E v obtained from the band structure of the pristine supercell is usually corrected by alignment of the average electrostatic potentials [32]. However, since in this case a great fraction of the supercell was occupied by vacuum the alignment term was found to be negligible.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.