Input parameters for the simulation of silicon solar cells in 2014

IEEE Journal of Photovoltaics

Volumn 5, Issue 4, 2015, Pages 1250-1263

  Fell, Andreas ^a   McIntosh, Keith R ^b   Altermatt, Pietro P ^c,d   Janssen, Gaby J M ^e   Stangl, Rolf ^f   Ho Baillie, Anita ^g   Steinkemper, Heiko ^h   Greulich, Johannes ^h   Muller, Matthias ⁱ   Min, Byungsul ^d   Fong, Kean C ^a   Hermle, Martin ^h   Romijn, Ingrid G ^e   Abbott, Malcolm D ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b PV Lighthouse ^*  (Australia)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^d Institute of Solar Energy Research   (Germany)

^e TNO   (Netherlands)

^f NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^g UNIVERSITY OF NEW SOUTH WALES   (Australia)

^h FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

ⁱ SolarWorld Innovations GmbH   (Germany)

Author keywords

Photovoltaic (PV) cells; semiconductor device modeling; silicon solar cells; Solar cell simulation

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICON; SOLAR CELLS; SOLAR POWER GENERATION;

CELL TYPES; CRYSTALLINE SILICON SOLAR CELLS; INPUT PARAMETER; MODEL APPROACH; PHOTOVOLTAIC; PHOTOVOLTAICS; REFERENCE POINTS; SOLAR CELL SIMULATION;

SILICON SOLAR CELLS;

EID: 84932599112     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2015.2430016     Document Type: Review

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