Efficiency potential of n-type silicon solar cells with aluminum-doped rear p + emitter

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1295-1303

  Rudiger, Marc ^a   Schmiga, Christian ^a   Rauer, Michael ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Aluminum doped emitter; n type silicon solar cells; photovoltaic cells

Indexed keywords

3-D NUMERICAL SIMULATION; 3D SIMULATIONS; ALUMINUM-DOPED EMITTER; CELL PERFORMANCE; DOPING CONCENTRATION; FRONT SURFACES; HEAVILY DOPED;

EFFICIENCY; INDUSTRIAL APPLICATIONS; PHOTOVOLTAIC CELLS; SILICON SOLAR CELLS; THREE DIMENSIONAL;

ALUMINUM;

EID: 84860233646     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2187655     Document Type: Article

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