Surface recombination parameters of interdigitated-back-contact silicon solar cells obtained by modeling luminescence images

Solar Energy Materials and Solar Cells

Volumn 120, Issue PART A, 2014, Pages 363-375

  Padilla, M ^a   Hoffler H ^a   Reichel, C ^a   Chu, H ^a   Greulich, J ^a   Rein, S ^a   Warta, W ^a   Hermle, M ^a   Schubert, M C ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

IBC; Imaging; Photoluminescence; Recombination; Silicon solar cell; Simulation

Indexed keywords

EMITTER SATURATION CURRENTS; IBC; OPERATING CONDITION; PHOTOLUMINESCENCE IMAGES; RECOMBINATION; SIMULATION; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS;

IMAGING TECHNIQUES; OPEN CIRCUIT VOLTAGE; PHOTOLUMINESCENCE;

SILICON SOLAR CELLS;

EID: 84888370178     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.05.050     Document Type: Article

References (38)

1. D. Smith, et al., Generation III high efficiency lower cost technology: transition to full scale manufacturing, in: Proceedings of the 38th IEEE Photvoltaic Specialists Conference, Austin, USA, 2012.
2. D. De Ceuster, et al., Low cost, high volume production of >22% efficiency silicon solar cells, in: Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2007.
3. M. Kasemann, et al., Spatially resolved silicon solar cell characterization using infrared imaging methods, in: Proceedings of the 33rd IEEE Photovoltaic Specialists Conference, San Diego, USA, 2008.
4. T. Trupke Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging Applied Physics Letters 90 093506 2007 1 3
5. M. Glatthaar Spatially resolved determination of the dark saturation current of silicon solar cells from electroluminescence images Journal of Applied Physics 105 2009 113110-1 to 113110-5
6. H. Kampwerth Advanced luminescence based effective series resistance imaging of silicon solar cells Applied Physics Letters 93 202102 2008 202102/1 202102/3
7. J. Haunschild Fast series resistance imaging for silicon solar cells using electroluminescence Physica Status Solidi RRL 3 2009 227 229
8. C. Shen, H. Kampwerth, M. Green, Spatially resolved photoluminescence imaging of essential silicon solar cell parameters, in: Proceedings of the 38th IEEE Photovoltaic Specialists Conference, Austin, USA, 2012.
9. D.E. Kane, R.M. Swanson, Measurement of the emitter saturation current by a contactless photoconductivity decay method, in: Proceedings of the 18th IEEE PVSC, Las Vegas, USA, 1985.
10. C. Reichel Comparison of emitter saturation current densities determined by injection dependent lifetime spectroscopy in high and low injection regimes Progress in Photovoltaics: Research and Applications 20 1 2011 21 30
11. H. Mäckel, and K. Varner On the determination of the emitter saturation current density from lifetime measurements of silicon devices Progress in Photovoltaics: Research and Applications 2012 vol. 20, 1-7
12. J.A. Giesecke, M. Kasemann, and W. Warta Determination of local minority carrier diffusion lengths in crystalline silicon from luminescence images Journal of Applied Physics 106 2009 014907-1 to 014907-8
13. J.A. Giesecke Minority carrier lifetime of silicon solar cells from quasi-steady-state photoluminescence Solar Energy Materials and Solar Cells 95 7 2011 1979 1982
14. K.R. McIntosh, P.P. Altermatt, A freeware 1d emitter model for silicon solar cells, in: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, USA, 2010.
15. A. Richter Improved quantitative description of Auger recombination in crystalline silicon Physical Review B 86 16 2012 165202-1 to 165202-14
16. P.P. Altermatt Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing Journal of Applied Physics 93 3 2003 1598 1604
17. D. Walter, et al., Contrast enhancement of luminescence images via point-spread deconvolution, in: Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Austin, USA, 2012.
18. P. Würfel Diffusion lengths of silicon solar cells from luminescence images Journal of Applied Physics 101 2007 123110-1 to 123110-10
19. M. Schubert Detektion von infraroter Strahlung zur Beurteilung der Materialqualität von Solar-Silizium Fakultät für Physik 2008 Universität Konstanz Konstanz 204
20. D. Hinken Experimental setup for camera-based measurements of electrically and optically stimulated luminescence of silicon solar cells and wafers Review of Scientific Instruments 82 033706 2011 1 9
21. C. Reichel Investigation of electrical shading effects in back-contacted back-junction silicon solar cells using the two dimensional charge carrier collection probability and the reciprocity theorem Journal of Applied Physics 109 2 2011 024507/1 02450712
22. C. Reichel Enhanced current collection in backcontacted back-junction Si solar cells by overcompensating a boron emitter with a phosphorus base-type doping Physica Status Solidi A 207 8 2010 1978 1981
23. C. Reichel, et al., Decoupling charge carrier collection and metallization geometry of back-contacted back-junction silicon solar cells by using insulating thin films, in: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, USA, 2010.
24. M. Hermle, et al., Shading effects in back-junction back-contacted silicon solar cells, in: Proceedings of the 33rd IEEE Photovoltaic Specialists Conference, San Diego, USA, 2008.
25. P. Würfel Physics of Solar Cells - From Principles to New Concepts 2005 John Wiley & Sons, Hoboken, New Jersey, USA 388
26. COMSOL Multiphysics. Available from: 〈http://www. comsol.comâŒ.
27. PC1D. Available from: 〈http://sourceforge.net/ projects/pc1d/âŒ.
28. D.A. Clugston, P.A. Basore, PC1D version 5: 32-bit solar cell modeling on personal computers, in: Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, California, USA, New York, NY, USA, 1997.
29. E. Peiner, A. Schlachetzki, and D. Krüger Doping profile analysis in Si by electrochemical capacitance-voltage measurements Journal of the Electrochemical Society 142 2 1995 576 580
30. D.B.M. Klaassen A unified mobility model for device simulation - I. Model equations and concentration dependence Solid-State Electronics 35 7 1992 953 959 (Pubitemid 23567459)
31. G.A.M. Hurkx, D.B.M. Klaassen, and M.P.G. Knuvers A new recombination model for device simulation including tunneling IEEE Transactions on Electron Devices 39 2 1992 331 338
32. J. del Alamo, S. Swirhun, and R.M. Swanson Measuring and modeling minority carrier transport in heavily doped silicon Solid-State Electronics 28 1-2 1985 47 54
33. A. Kimmerle, et al., Modelling carrier recombination in highly phosphorus-doped industrial emitters, in: Proceedings of the 1st International Conference on Silicon Photovoltaics, Freiburg, Germany, Elsevier Energy Procedia, 2011.
34. Synopsys Sentaurus Device. Available from: 〈http:// www.synopsys.comâŒ.
35. C. Reichel, COMSOL Multiphysics for Analysis and Simulation of Silicon Solar Cells, SiliconForest Workshop, 2012.
36. M.C. Schubert Quantitative carrier lifetime images optically measured on rough silicon wafers Journal of Applied Physics 101 2007 124907-1 to 124907-5
37. S. Kluska, et al., Loss analysis of high-efficiency back-contact back-junction silicon solar cells, in: Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 2008.
38. C. Schinke Contacting interdigitated back-contact solar cells with four busbars for precise current-voltage measurements under standard testing conditions IEEE Journal of Photovoltaics 2 3 2012 247 255