Formation of aluminum-oxygen complexes in highly aluminum-doped silicon

Semiconductor Science and Technology

Volumn 25, Issue 10, 2010, Pages

  Bock, Robert ^a   Altermatt, Pietro P ^a   Schmidt, Jan ^a   Brendel, Rolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION; DEFECT GENERATION; DOPED SILICON; OXYGEN COMPLEXES; TEMPERATURE-DEPENDENT MEASUREMENTS; THERMAL TREATMENT; THERMALLY ACTIVATED;

ACTIVATION ENERGY; CARRIER LIFETIME; DEFECTS; OXYGEN;

ALUMINUM;

EID: 78649944571     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/10/105007     Document Type: Article

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