Effect of incomplete ionization for the description of highly aluminum-doped silicon

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Rüdiger, Marc ^a   Rauer, Michael ^a   Schmiga, Christian ^a   Hermle, Martin ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE MODELING; EXPERIMENTAL DATA; INCOMPLETE IONIZATION; INHOMOGENEITIES; PRECISE MODELING; RECOMBINATION MECHANISMS; SATURATION CURRENT DENSITIES; SI SURFACES;

IONIZATION; NUMERICAL METHODS;

ALUMINUM;

EID: 79961101779     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3603043     Document Type: Article

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