Simulation of emitter doping profiles formed by industrial POCl3 processes

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2013, Pages 1383-1388

  Abbott, Malcolm ^a   Scardera, Giuseppe ^b   McIntosh, Keith R ^a   Meisel, Andreas ^b  

^a PV Lighthouse   (Australia)

^b DUPONT COMPANY   (United States)

Author keywords

Emitter; Modeling; Silicon

Indexed keywords

MODELS; SILICON;

EMITTER; EMITTER DOPING; LIGHTLY DOPED; PHOSPHORUS ATOM; RECOMBINATION LOSS; SRH RECOMBINATIONS; SURFACE CONCENTRATION; SURFACE RECOMBINATION VELOCITIES;

SILICON WAFERS;

EID: 84896472220     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6744402     Document Type: Conference Paper

References (8)

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