메뉴 건너뛰기




Volumn 131, Issue , 2014, Pages 30-36

Implementation of Fermi-Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells

Author keywords

Device simulation; Fermi Dirac statistics; Silicon; Solar cell

Indexed keywords

SOLAR CELLS;

EID: 84908461763     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.06.021     Document Type: Article
Times cited : (33)

References (31)
  • 1
    • 18644375512 scopus 로고    scopus 로고
    • Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters
    • P.P. Altermatt, J.O. Schumacher, A. Cuevas, M.J. Kerr, S.W. Glunz, R.R. King, G. Heiser, and A. Schenk Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters J. Appl. Phys. 92 6 2002 3187
    • (2002) J. Appl. Phys. , vol.92 , Issue.6 , pp. 3187
    • Altermatt, P.P.1    Schumacher, J.O.2    Cuevas, A.3    Kerr, M.J.4    Glunz, S.W.5    King, R.R.6    Heiser, G.7    Schenk, A.8
  • 2
    • 0013226142 scopus 로고    scopus 로고
    • Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation
    • A. Schenk Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation J. Appl. Phys. 84 7 1998 3684
    • (1998) J. Appl. Phys. , vol.84 , Issue.7 , pp. 3684
    • Schenk, A.1
  • 3
    • 84882410091 scopus 로고    scopus 로고
    • Empirical determination of the energy band gap narrowing in highly doped n+ silicon
    • D. Yan, and A. Cuevas Empirical determination of the energy band gap narrowing in highly doped n+ silicon J. Appl. Phys. 114 4 2013 044508
    • (2013) J. Appl. Phys. , vol.114 , Issue.4 , pp. 044508
    • Yan, D.1    Cuevas, A.2
  • 9
    • 84898740051 scopus 로고    scopus 로고
    • A graphical user interface for multivariable analysis of silicon solar cells using scripted PC1D simulations
    • H. Haug, B.R. Olaisen, Ø;. Nordseth, and E.S. Marstein A graphical user interface for multivariable analysis of silicon solar cells using scripted PC1D simulations Energy Procedia 38 2013 72 79
    • (2013) Energy Procedia , vol.38 , pp. 72-79
    • Haug, H.1    Olaisen, B.R.2    Nordseth Ø.3    Marstein, E.S.4
  • 10
    • 84908411709 scopus 로고    scopus 로고
    • PC1D help file. [Online]. [Accessed: 01-Apr-2014]
    • PC1D help file. [Online]. Available: 〈http://www.pvlighthouse.com.au/Resources/PC1D/〉. [Accessed: 01-Apr-2014].
  • 12
    • 0004534425 scopus 로고
    • Accurate, short series approximations to Fermi-Dirac integrals of order -1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2
    • P. Van Halen, and D.L. Pulfrey Accurate, short series approximations to Fermi-Dirac integrals of order -1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2 J. Appl. Phys. 57 12 1985 5271
    • (1985) J. Appl. Phys. , vol.57 , Issue.12 , pp. 5271
    • Van Halen, P.1    Pulfrey, D.L.2
  • 13
    • 0040163112 scopus 로고
    • Rational function approximations for Fermi-Dirac integrals
    • H.M. Antia Rational function approximations for Fermi-Dirac integrals Astrophys. J. Suppl 84 1993 101 108
    • (1993) Astrophys. J. Suppl , vol.84 , pp. 101-108
    • Antia, H.M.1
  • 16
    • 80755153221 scopus 로고    scopus 로고
    • Models for numerical device simulations of crystalline silicon solar cells - A review
    • P. Altermatt Models for numerical device simulations of crystalline silicon solar cells - a review J. Comput. Electron 10 3 2011 314 330
    • (2011) J. Comput. Electron , vol.10 , Issue.3 , pp. 314-330
    • Altermatt, P.1
  • 17
    • 0037320144 scopus 로고    scopus 로고
    • Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
    • P.P. Altermatt, A. Schenk, F. Geelhaar, and G. Heiser Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing J. Appl. Phys. 93 3 2003 1598
    • (2003) J. Appl. Phys. , vol.93 , Issue.3 , pp. 1598
    • Altermatt, P.P.1    Schenk, A.2    Geelhaar, F.3    Heiser, G.4
  • 18
    • 36449005674 scopus 로고
    • Intrinsic carrier concentration and minority-carrier mobility of silicon from 77 to 300 K
    • A.B. Sproul, and M.A. Green Intrinsic carrier concentration and minority-carrier mobility of silicon from 77 to 300 K J. Appl. Phys. 73 3 1993 1214
    • (1993) J. Appl. Phys. , vol.73 , Issue.3 , pp. 1214
    • Sproul, A.B.1    Green, M.A.2
  • 20
    • 33845421788 scopus 로고    scopus 로고
    • General parameterization of Auger recombination in crystalline silicon
    • M.J. Kerr, and A. Cuevas General parameterization of Auger recombination in crystalline silicon J. Appl. Phys. 91 4 2002 2473 2480
    • (2002) J. Appl. Phys. , vol.91 , Issue.4 , pp. 2473-2480
    • Kerr, M.J.1    Cuevas, A.2
  • 21
    • 0000238429 scopus 로고
    • Intrinsic concentration, effective densities of states, and effective mass in silicon
    • M.A. Green Intrinsic concentration, effective densities of states, and effective mass in silicon J. Appl. Phys. 67 6 1990 2944
    • (1990) J. Appl. Phys. , vol.67 , Issue.6 , pp. 2944
    • Green, M.A.1
  • 22
    • 0026899612 scopus 로고
    • A unified mobility model for device simulation - I. Model equations and concentration dependence
    • D.B.M. Klaassen A unified mobility model for device simulation - I. Model equations and concentration dependence Solid State Electron. 35 7 1992 953 959
    • (1992) Solid State Electron. , vol.35 , Issue.7 , pp. 953-959
    • Klaassen, D.B.M.1
  • 23
    • 0026899752 scopus 로고
    • A unified mobility model for device simulation - II. Temperature dependence of carrier mobility and lifetime
    • D.B.M. Klaassen A unified mobility model for device simulation - II. Temperature dependence of carrier mobility and lifetime Solid State Electron. 35 7 1992 961 967
    • (1992) Solid State Electron. , vol.35 , Issue.7 , pp. 961-967
    • Klaassen, D.B.M.1
  • 25
    • 84908411707 scopus 로고    scopus 로고
    • Synopsis Inc, Sentaurus Device, Version H-2013.03. Mountain View, California, USA
    • Synopsis Inc, Sentaurus Device, Version H-2013.03. Mountain View, California, USA.
  • 27
    • 80052086502 scopus 로고    scopus 로고
    • Modelling carrier recombination in highly phosphorus-doped industrial emitters
    • A. Kimmerle, A. Wolf, U. Belledin, and D. Biro Modelling carrier recombination in highly phosphorus-doped industrial emitters Energy Procedia 8 2011 275 281
    • (2011) Energy Procedia , vol.8 , pp. 275-281
    • Kimmerle, A.1    Wolf, A.2    Belledin, U.3    Biro, D.4
  • 28
    • 84891555392 scopus 로고    scopus 로고
    • Application of ion Implantation Emitter in PERC Solar Cells
    • J. Wu, Y. Liu, X. Wang, and L. Zhang Application of ion Implantation Emitter in PERC Solar Cells IEEE J. Photovoltaics 4 1 2014 52 57
    • (2014) IEEE J. Photovoltaics , vol.4 , Issue.1 , pp. 52-57
    • Wu, J.1    Liu, Y.2    Wang, X.3    Zhang, L.4
  • 30
    • 34548679383 scopus 로고    scopus 로고
    • Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
    • B. Hoex, J. Schmidt, R. Bock, P.P. Altermatt, M.C.M. van de Sanden, and W.M.M. Kessels Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 Appl. Phys. Lett. 91 11 2007 112103 112107
    • (2007) Appl. Phys. Lett. , vol.91 , Issue.11 , pp. 112103-112107
    • Hoex, B.1    Schmidt, J.2    Bock, R.3    Altermatt, P.P.4    Van De Sanden, M.C.M.5    Kessels, W.M.M.6
  • 31
    • 0020206154 scopus 로고
    • Approximations for Fermi-Dirac integrals, especially the function used to describe electron density in a semiconductor
    • J.S. Blakemore Approximations for Fermi-Dirac integrals, especially the function used to describe electron density in a semiconductor Solid State Electron. 25 11 1982 1067 1076
    • (1982) Solid State Electron. , vol.25 , Issue.11 , pp. 1067-1076
    • Blakemore, J.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.