Isotextured silicon solar cell analysis and modeling 2: Recombination and device modeling

IEEE Journal of Photovoltaics

Volumn 2, Issue 4, 2012, Pages 465-472

  Baker Finch, Simeon C ^a   McIntosh, Keith R ^b   Terry, Mason L ^c   Wan, Yimao ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b PV Lighthouse   (Australia)

^c DUPONT COMPANY   (United States)

Author keywords

Photovoltaic cells; semiconductor device modeling; silicon; surface passivation; surface recombination; surface texture

Indexed keywords

BACK SURFACE FIELDS; CELL ANALYSIS; DEVICE MODELING; DEVICE PARAMETERS; DEVICE STRUCTURES; ETCH DEPTH; ONE DIMENSION; PHOTOGENERATION; SCREEN-PRINTED; SILICON SURFACES; SURFACE AREA; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS; SURFACE TEXTURES;

PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICE MODELS; SILICON; SILICON NITRIDE; SILICON OXIDES;

SILICON SOLAR CELLS;

EID: 84866742839     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2204390     Document Type: Article

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