Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Rahmouni, M ^a   Datta, A ^b   Chatterjee, P ^b   Damon Lacoste, J ^c   Ballif, C ^c   Roca I Cabarrocas, P ^d  

^a UNIVERSITÉ DES SCIENCES ET DE LA TECHNOLOGIE D ORAN MOHAMED BOUDIAF   (Algeria)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

^c EPFL   (Switzerland)

^d LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; BAND GAPS; CONTACT BARRIER HEIGHT; CRYSTALLINE SILICON SUBSTRATES; CRYSTALLINE SILICONS; CURRENT TRANSPORT; DEFECT STATE; DIFFUSION MECHANISMS; ELECTRICAL CHARACTERISTIC; EMITTER LAYERS; EXPERIMENTAL DATA; FILL FACTOR; GAIN INSIGHT; HETEROJUNCTION WITH INTRINSIC THIN LAYERS; HIGH EFFICIENCY; HIGH FILLS; HIT CELLS; HOMOJUNCTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); I-LAYER; LARGE-SCALE MANUFACTURING; LOW COSTS; NUMERICAL MODELING; RECORD VALUES; SI WAFER; SOLAR CELL PERFORMANCE; SOLAR MODULE; STATE OF THE ART; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; AMORPHOUS SEMICONDUCTORS; CELLS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; CYTOLOGY; EPITAXIAL GROWTH; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS; SOLAR ENERGY; SURFACE DEFECTS; THIN FILMS; TIN; TITANIUM COMPOUNDS;

AMORPHOUS SILICON;

EID: 77949716644     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3326945     Document Type: Article

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