Quantitative Infrared Photoelasticity of Silicon Photovoltaic Wafers Using a Discrete Dislocation Model

Journal of Applied Mechanics, Transactions ASME

Volumn 82, Issue 1, 2015, Pages

  Lin, T W ^a   Horn, G P ^a   Johnson, H T ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

discrete dislocation modeling; photoelasticity; residual thermal stress

Indexed keywords

ELASTICITY; INDENTATION; MONOCRYSTALLINE SILICON; PHOTOELASTICITY; PHYSICAL OPTICS; SILICON; SOLAR CELLS; STRAIN ENERGY; STRESS RELAXATION;

CRYSTALLINE DEFECTS; DISCRETE DISLOCATION MODEL; DISLOCATION STRUCTURES; INFRARED PHOTOELASTICITY; NUMERICAL MODELING APPROACH; PHOTOLUMINESCENCE MEASUREMENTS; RESIDUAL THERMAL STRESS; SILICON PHOTOVOLTAIC;

SILICON WAFERS;

EID: 84931260403     PISSN: 00218936     EISSN: 15289036     Source Type: Journal    
DOI: 10.1115/1.4028987     Document Type: Article

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