Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - Numerical model and qualitative considerations

Journal of Crystal Growth

Volumn 230, Issue 1-2, 2001, Pages 305-313

  Muiznieks A ^a,b   Raming, G ^a   Muhlbauer A ^a   Virbulis, J ^c   Hanna, B ^c   Ammon, W V ^c  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITY OF LATVIA   (Latvia)

^c SILTRONIC AG   (Germany)

Author keywords

A1. Computer simulation; A1. Stresses; A2. Czochralski method; A2. Floating zone technique; B2. Semiconducting silicon

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; HEAT RADIATION; MATHEMATICAL MODELS; MIRRORS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STRESS ANALYSIS; THERMAL STRESS;

FLOATING ZONE TECHNIQUE; SOFTWARE PACKAGE ANSYS;

SEMICONDUCTING SILICON;

EID: 0035426551     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01322-7     Document Type: Conference Paper

References (11)