Photoelastic characterization of Si wafers by scanning infrared polariscope

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 22-25

  Fukuzawa, M ^a   Yamada, M ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Characterization; A1. Defects; A1. Stress; B2. Semiconducting silicon

Indexed keywords

BIREFRINGENCE; CRYSTAL DEFECTS; PHOTOELASTICITY; POLARISCOPES; RESIDUAL STRESSES; STRAIN;

SCANNING INFRARED POLARISCOPES (SIRP);

SILICON WAFERS;

EID: 0035399350     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01043-0     Document Type: Article

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