Rapid dislocation-density mapping of as-cut crystalline silicon wafers

Physica Status Solidi - Rapid Research Letters

Volumn 7, Issue 12, 2013, Pages 1041-1044

  Needleman, David Berney ^a   Choil, Hyunjoo ^b   Powelll, Douglas M ^a   Buonassisi, Tonio ^a  

^a Massachusetts Institute of Technology   (United States)

^b Kookmin University   (South Korea)

Author keywords

Dislocations; Etch pits; Optical microscopy; Photovoltaics; Silicon

Indexed keywords

CRYSTALLINE SILICON WAFERS; DARK FIELD IMAGING; DISLOCATION DENSITIES; ETCH PITS; NORMALIZED ERRORS; PHOTOVOLTAICS; SPATIAL RESOLUTION; STRUCTURAL DEFECT;

DEFECT DENSITY; DISLOCATIONS (CRYSTALS); OPTICAL MICROSCOPY; SCANNING; SILICON;

SILICON WAFERS;

EID: 84890216399     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201308150     Document Type: Article

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