Quality control of as-cut multicrystalline silicon wafers using photoluminescence imaging for solar cell production

Solar Energy Materials and Solar Cells

Volumn 94, Issue 12, 2010, Pages 2007-2012

  Haunschild, Jonas ^a   Glatthaar, Markus ^a   Demant, Matthias ^a   Nievendick, Jan ^a   Motzko, Markus ^a   Rein, Stefan ^a   Weber, Eicke R ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Lifetime measurement; Material quality; Multicrystalline silicon; Photoluminescence imaging; Silicon solar cells

Indexed keywords

CELL PARAMETER; CELL PRODUCTION; DEFECTS OF CRYSTALS; HIGH SPATIAL RESOLUTION; LIFETIME MEASUREMENTS; MATERIAL QUALITY; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SILICON WAFERS; PHOTOLUMINESCENCE IMAGING;

CRYSTAL GROWTH; CRYSTALLIZATION; DEFECTS; EDGE DISLOCATIONS; MATERIALS; OPEN CIRCUIT VOLTAGE; PHOTOLUMINESCENCE; POLYSILICON; QUALITY CONTROL; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS;

SILICON WAFERS;

EID: 77957653652     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.06.003     Document Type: Article

References (32)

1. T. Trupke Photoluminescence imaging of silicon wafers Applied Physics Letters 89 2006 44107
2. P. Wrfel Diffusion Lengths of Silicon Solar Cells from Luminescence Images Journal of Applied Physics 101 2007 123110
3. D. Macdonald Imaging interstitial iron concentrations in boron-doped crystalline silicon unsing photoluminescence Journal of Applied Physics 103 2008 073710
4. T. Trupke, et al., Progress with luminescence imaging for the characterisation of silicon wafers and solar cells, in: Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2007, pp. 2231.
5. M. Kasemann, et al., Progress in Silicon Solar Cell Characterization with Infrared Imaging Methods, in: Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 2008, pp. 965973.
6. R.A. Sinton Contactless determination of currentvoltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data Applied Physics Letters 69 1996 2510 2512
7. T. Trupke, et al., Photoluminescence characterization of silicon wafers and silicon solar cells, in: Proceedings of the 18th Workshop on Crystalline Silicon Solar Cells and Modules, Vail, Colorado, USA, 2008, pp. 8895.
8. S. Herlufsen, et al., Camera-based photoluminescence lifetime imaging of crystalline silicon wafers, in: Proceeding of the 24th PV Solar Energy Conference and Exhibtion, Hamburg, 2009, pp. 913917.
9. M. The, et al., Quantitative lifetime measurements with photoluminescence imaging, in: Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2007, pp. 354359.
10. J.A. Giesecke Determination of local minority carrier diffusion lengths in crystalline silicon from luminescence images Journal of Applied Physics 106 2009 1 8
11. P. Wrfel The chemical potential of radiation Journal of Physics C: Solid State Physics 15 1982 3967 3985
12. T. Trupke, et al., Photoluminescence: a surprisingly sensitive lifetime technique, in: Proceedings of the 31st IEEE Photovoltaic Specialists Conference, Orlando, Florida, USA, 2005, pp. 903906.
13. J. Haunschild, et al., Comparing luminescence imaging with illuminated lock-in thermography and carrier density imaging inspection of silicon solar cells, in: Proceeding of the 24th European Photovoltaic Solar Energy Conference and Exibition, Hamburg, 2009, pp. 857862.
14. M. Rdiger Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon Applied Physics Letters 92 2008 222112
15. V. Grivickas Surface and Auger recombination in silicon wafers of high carrier density Lithuanian Physics Journal 29 1989 48 53
16. J. Giesecke Spatially resolved characterization of silicon as-cut wafers with photoluminescence imaging Progress in Photovoltaics: Research and Applications 17 2009 217 225
17. R. Sinton, On the problem of determining the bulk lifetime of unpassivated silicon wafers, in: Proceedings of the 14th workshop on Crystalline Silicon Solar cells and Modules, Winter Park, USA, 2004, pp. 152158.
18. M. Rinio, et al., Defects in the deteriorated border layer of block-cast multicrystalline silicon ingots, in: Proceeding of the 19th European Photovoltaic Solar Energy Conference, Paris, France, 2004, pp. 762765.
19. T. Naerland Origin of the low carrier lifetime edge zone in multicrystalline Pv silicon Progress in Photovoltaics: Research and Applications 17 2009 289 296
20. S. Riepe, et al., Increased wafer yield for solar cells in top and bottom regions of cast multicrystalline silicon, in: Proceeding of the 19th European Photovoltaic Solar Energy Conference, Paris, France, 2004, pp. 986989.
21. L.J. Geerligs, Mc-Si: Relation between ingot quality and cell efficiency, in: Proceedings of the 12th workshop on Crystalline Silicon Solar cells and Modules, Colorado, USA, 2002, pp. 288291.
22. M. Stemmer Monte Carlo simulation of the minority-carrier recombination at and around grain boundaries surrounded by a denuded zone revealed by light-beam-induced current mapping Materials Science and Engineering B 24 1994 180 183
23. M. Rinio, et al., Spatial redistribution of recombination centres by the solar cell process, in: Proceeding of the 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 2005, pp. 706709.
24. J.I. Hanoka Electron-beam-induced currents in semiconductors Annual Review of Materials Science 11 1981 353 380
25. A. Krause, et al., The influence of fine-grained areas in solar wafers on efficiency and shunt behaviour of solar cells, in: Proceeding of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2007, pp. 11831186.
26. N. Usami, et al., How we can decrease defect density in Si multicrystals to realize high-efficiency solar cells?, in: Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, 2009, pp. 10201022.
27. F. Secco d ́Aragona Dislocation etch for (100) planes in silicon Solid-State Science and Technology 119 1972 948 951
28. M. Rinio, et al., Measurement of the normalized recombination strength of dislocations in multicrystalline silicon solar cells, in: 9th International Autumn Meeting. Gettering and Defect Engineering in Semiconductor Technology. GADEST 2001, Catania, Italy, 2001/2, pp. 701706.
29. M. Rinio, et al., Hydrogen Passivation of extended defects in multicrystalline silicon solar cells, in: Proceeding of the21st European Photovoltaic Solar Energy Conference, Dresden, 2006, pp. 684687.
30. B. Ryningen, et al., Dislocation clusters in multicrystalline silicon, in: Proceeding of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2007, pp. 10861090.
31. S. Riepe Carrier density imaging as a tool for characterising the electrical activity of defects in pre-processed multicrystalline silicon Solid State Phenomena 9596 2004 229 234
32. T. Arguirov Temperature behaviour of extended defects in solar grade silicon investigated by photoluminescence and ebic Materials Science and Engineering B 102 2003 251 256