Dislocation density reduction in multicrystalline silicon solar cell material by high temperature annealing

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Hartman, Katy ^a   Bertoni, Mariana ^a   Serdy, James ^a   Buonassisi, Tonio ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BUILDING MATERIALS; DIRECT ENERGY CONVERSION; NONMETALS; PHOTOVOLTAIC CELLS; POLYSILICON; REDUCTION; SILICON; SINGLE CRYSTALS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT;

ANNEALING TEMPERATURES; CRYSTALLOGRAPHIC GLIDE; DISLOCATION ANNIHILATION; DISLOCATION DENSITIES; DISLOCATION DENSITY REDUCTION; DISLOCATION MOVEMENT; HIGH-TEMPERATURE ANNEALING; IMPURITY DIFFUSION; MULTICRYSTALLINE-SILICON; SOLAR-CELL MATERIALS; TEMPERATURE-DEPENDENT; TIME-TEMPERATURE PROFILES;

SILICON WAFERS;

EID: 52949109768     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990644     Document Type: Article

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