Characterization and Control of Residual Stress and Curvature in Anodically Bonded Devices and Substrates with Etched Features

Experimental Mechanics

Volumn 52, Issue 6, 2012, Pages 637-648

  Inzinga, R A ^a   Lin, T W ^a   Yadav, M ^a   Johnson, H T ^a   Horn, G P ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Anodic bonding; Infrared photoelastic stress analysis; MEMS; Residual stress; Silicon inspection

Indexed keywords

ANODIC BONDING; BULK WAFERS; INFRARED PHOTOELASTICITY; NUMERICAL PREDICTIONS; PHOTOELASTIC STRESS ANALYSIS; POST PROCESSING; PROCESSING TECHNIQUE; PYREX WAFERS; STRUCTURAL FAILURE; THERMO-MECHANICAL; WAFER CURVATURE; INFRARED PHOTOELASTIC STRESS ANALYSIS; MICRO ELECTROMECHANICAL SYSTEM (MEMS); SILICON INSPECTIONS;

ELECTROMECHANICAL DEVICES; FINITE ELEMENT METHOD; FRACTURE MECHANICS; MEMS; RESIDUAL STRESSES; STRESS ANALYSIS; STRESS CONCENTRATION; WAFER BONDING; SILICON;

SILICON WAFERS;

EID: 84861481416     PISSN: 00144851     EISSN: 17412765     Source Type: Journal    
DOI: 10.1007/s11340-011-9528-6     Document Type: Article

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