Relationship of band-edge luminescence to recombination lifetime in silicon wafers

Journal of Electronic Materials

Volumn 37, Issue 4, 2008, Pages 396-402

  Ahrenkiel, R K ^a,b   Johnston, S W ^b   Metzger, W K ^b   Dippo, P ^b  

^a Department of Metallurgical and Materials Engineering   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Minority carrier lifetime; Photoluminescence; Recombination lifetime; Silicon

Indexed keywords

CRYSTALLINE MATERIALS; METHANOL; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SINGLE CRYSTALS; SPECTRUM ANALYSIS;

CRYSTALLINE SILICON; EXCITATION INTENSITY; MINORITY CARRIER LIFETIME; RECOMBINATION LIFETIME;

SILICON WAFERS;

EID: 39849092617     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0325-z     Document Type: Article

References (22)

1. 1. M. Kunst G. Beck 1986 J. Appl. Phys. 60 3558 10.1063/1.337612 1:CAS:528:DyaL28XmtlKmsL8%3D M. Kunst, G. Beck, J. Appl. Phys. 60, 3558 (1986)
2. 2. R.A. Sinton A. Cuevas 1996 Appl. Phys. Lett. 69 2510 10.1063/1.117723 1:CAS:528:DyaK28XmtlChs7Y%3D R.A. Sinton, A. Cuevas, Appl. Phys. Lett. 69, 2510 (1996)
3. 3. T. Trupke R.A. Bardos 2004 Appl. Phys. Lett. 85 3611 10.1063/1.1807961 1:CAS:528:DC%2BD2cXovFWnsLc%3D T. Trupke, R.A. Bardos, Appl. Phys. Lett. 85, 3611 (2004)
4. 4. T. Trupke R.A. Bardos M.D. Abbott 2005 Appl. Phys. Lett. 87 184102 10.1063/1.2119411 T. Trupke, R.A. Bardos, M.D. Abbott, Appl. Phys. Lett. 87, 184102 (2005)
5. 5. T. Trupke R.A. Bardso M.C. Schubert W. Warta 2006 Appl. Phys. Lett. 89 044107 10.1063/1.2234747 T. Trupke, R.A. Bardso, M.C. Schubert, W. Warta, Appl. Phys. Lett. 89, 044107 (2006)
6. 6. I. Tarasov S. Ostapenko C. Haessler E.-U. Reisner 2000 Mater. Sci. Eng. B71 51 10.1016/S0921-5107(99)00348-7 1:CAS:528:DC%2BD3cXmtlChuw%3D%3D I. Tarasov, S. Ostapenko, C. Haessler, E.-U. Reisner, Mater. Sci. Eng. B71, 51 (2000)
7. 7. Y. Koshka S. Ostapenko I. Tarasov S. McHugo J.P. Kalejs 1999 Appl. Phys. Lett. 74 1555 10.1063/1.123614 1:CAS:528:DyaK1MXhslCqs7k%3D Y. Koshka, S. Ostapenko, I. Tarasov, S. McHugo, J.P. Kalejs, Appl. Phys. Lett. 74, 1555 (1999)
8. 8. S. Ostapenko 2000 Semicond. Sci. Technol. 15 840 10.1088/0268-1242/15/8/310 1:CAS:528:DC%2BD3cXmsVOqtrk%3D S. Ostapenko et al. (2000) Semicond. Sci. Technol. 15:840
9. 9. J.P. Kalejs (DOE Solar Program Review Meeting 2004, DOE/GO-102005-2067, 2004) p. 173
10. 10. J.I. Pankove 1971 Optical Processes in Semiconductors Dover Publications Inc. New York 111 J.I. Pankove, Optical Processes in Semiconductors, p. 111, (1971), Dover Publications Inc., New York
11. 11. R.K. Ahrenkiel B.M. Keyes G.B. Lush M.R. Melloch M.S. Lundstrom H.F. MacMillan 1992 J. Vac. Sci. Technol. A 10 990 10.1116/1.577892 1:CAS:528:DyaK38Xlt1ahs7w%3D R.K. Ahrenkiel, B.M. Keyes, G.B. Lush, M.R. Melloch, M.S. Lundstrom, H.F. MacMillan, J. Vac. Sci. Technol. A 10, 990 (1992)
12. 12. O. King and D.G. Hall, Phys. Rev. B 10661 (1994)
13. 13. EMIS Data Review, Series No. 4, Properties of Silicon (London: INSPEC, IEE, 1988)
14. 14. W. Shockley W.T. Read 1952 Phys. Rev. 87 335 10.1103/PhysRev.87.835 W. Shockley, W.T. Read, Phys. Rev. 87, 335 (1952)
15. 15. R.N. Hall 1952 Phys. Rev. 87 387 10.1103/PhysRev.87.387 1:CAS:528:DyaG38Xls1Ghuw%3D%3D R.N. Hall, Phys. Rev. 87, 387 (1952)
16. 16. R.K. Ahrenkiel, Current Topics in Photovoltaics, vol. 3, ed. T. Coutts and J. Meakin (New York: Academic Press, 1988), pp. 19–21
17. 17. R. K. Ahrenkiel, Minority Carriers in III–V Semiconductors: Physics and Applications, p. 83, Semiconductors and Semimetals, vol. 39, ed. R.K. Ahrenkiel and M.S. Lundstrom (Boston: Academic Press, 1993)
18. 18. R.K. Ahrenkiel, AIP Conference Proceedings, vol. 394 (AIP Press, 1997), p. 225
19. 19. R.K. Ahrenkiel and S. Johnston, Materials Research Society Symposium Proceedings, vol. 510 (Materials Research Society, 1998), pp. 575–581
20. 20. R.K. Ahrenkiel S.W. Johnston 2003 Mater. Sci. Eng. B102 161 10.1016/S0921-5107(02)00639-6 1:CAS:528:DC%2BD3sXms1ahsbY%3D R.K. Ahrenkiel, S.W. Johnston, Mater. Sci. Eng. B102, 161 (2003)
21. 21. R. Ahrenkiel, U.S. patent 5,929,652 (27 July 1999); R. Ahrenkiel and S. Johnston, U.S. patent 6,275,060 (August 14, 2001); S. Johnston and R. Ahrenkiel, U.S. patent 6,369,603 (April 9, 2002)
22. 22. H. M'Saad J. Michel J.J. Lappe L.C. Kimerling 1994 J.␣Electron. Mater. 23 487 10.1007/BF02671234 H. M'Saad, J. Michel, J.J. Lappe, L.C. Kimerling, J. Electron. Mater. 23, 487 (1994)