Residual stresses at cavity corners in silicon-on-insulator bonded wafers

Journal of Micromechanics and Microengineering

Volumn 23, Issue 9, 2013, Pages

  Lin, T W ^a   Elkhatib, O ^a   Makinen, J ^b   Palokangas, M ^b   Johnson, H T ^a   Horn, G P ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Okmetic Oyj   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED OXIDE LAYERS; EXPERIMENTAL ANALYSIS; GENERATION MECHANISM; INFRARED PHOTOELASTICITY; MICRO ELECTRO MECHANICAL SYSTEM; OPTICAL PROFILOMETRY; PROCESSING PARAMETERS; SILICON ON INSULATOR WAFERS;

ELECTRON BEAM LITHOGRAPHY; MEMS; RELIABILITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; WAFER BONDING;

RESIDUAL STRESSES;

EID: 84884867623     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/23/9/095004     Document Type: Article

References (27)

1. Cristoloveanu S 2001 Silicon on insulator technologies and devices: from present to future Solid State Electron. 45 1403-11 (Pubitemid 32820953)
2. Renard S 2000 Industrial MEMS on SOI J. Micromech. Microeng. 10 245-9
3. Klaassen E H, Petersen K, Noworolski J M, Logan J, Maluf N I, Brown J, Storment C, McCulley W and Kovacs G T A 1996 Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures Sensors Actuators A 52 132-9 (Pubitemid 126346959)
4. Suni T, Henttinen K, Dekker J, Luoto H, Kulawski M, Makinen J and Mutikainen R 2006 Silicon-on-insulator wafers with buried cavities J. Electrochem. Soc. 153 G299 (Pubitemid 43352261)
5. Milanovic V 2004 Multilevel beam SOI-MEMS fabrication and applications J. Microelectromech. Syst. 13 19-30
6. Park S, Kwak D, Ko H, Song T and Cho D 2005 Selective silicon-on-insulator (SOI) implant: a new micromachining method without footing and residual stress J. Micromech. Microeng. 15 1607-13 (Pubitemid 41205542)
7. Luoto H, Henttinen K, Suni T, Dekker J, Mäkinen J and Torkkeli A 2007 MEMS on cavity-SOI wafers Solid State Electron. 51 328-32 (Pubitemid 46330467)
8. Sharma S, Buchholz K, Luber S M, Rant U, Tornow M and Abstreiter G 2006 Silicon-on-insulator microfluidic device with monolithic sensor integration for μTAS applications J. Microelectromech. Syst. 15 308-13
9. Palokangas M O, Dekker J, Henttinen K and Makinen J 2008 Direct bonding of oxidized cavity wafers ECS Trans. 16 457-63
10. Horn G, Mackin T J and Lesniak J 2005 Trapped particle detection in bonded semiconductors using gray-field photoelastic imaging Exp. Mech. 45 457-66 (Pubitemid 41419585)
11. Jeong K-H and Lee L P 2005 A novel microfabrication of a self-aligned vertical comb drive on a single SOI wafer for optical MEMS applications J. Micromech. Microeng. 15 277-81 (Pubitemid 40285583)
12. Sabate N, Vogel D, Gollhardt A, Keller J, Cane C, Gracia I, Morante J R and Michel B 2007 Residual stress measurement on a MEMS structure with high-spatial resolution J. Microelectromech. Syst. 16 365-72 (Pubitemid 46564214)
13. Min Y and Kim Y 2000 In situ measurement of residual stress in micromachined thin films using a specimen with composite-layered cantilevers J. Micromech. Microeng. 10 314-21
14. Shen Y-L, Suresh S and Blech I A 1996 Stresses, curvatures, and shape changes arising from patterned lines on silicon wafers J. Appl. Phys. 80 1388
15. Iida T, Itoh T, Noguchi D, Takanashi Y, Takano Y and Kanda Y 2001 Residual lattice strain in thin silicon-on-insulator bonded wafers: effects on electrical properties and Raman shifts J. Appl. Phys. 89 2109 (Pubitemid 33661979)
16. Iida T, Itoh T, Noguchi D and Takano Y 2000 Residual lattice strain in thin silicon-on-insulator bonded wafers: thermal behavior and formation mechanisms J. Appl. Phys. 87 675
17. Zheng T and Danyluk S 2002 Study of stresses in thin silicon wafers with near-infrared phase stepping photoelasticity J. Mater. Res. 17 36-42 (Pubitemid 34574578)
18. Fukuzawa M and Yamada M 2001 Photoelastic characterization of Si wafers by scanning infrared polariscope J. Cryst. Growth 229 22-5 (Pubitemid 32610355)
19. Horn G, Lesniak J, Mackin T and Boyce B 2005 Infrared grey-field polariscope: a tool for rapid stress analysis in microelectronic materials and devices Rev. Sci. Instrum. 76 045108 (Pubitemid 40565044)
20. Inzinga R A, Lin T-W, Yadav M, Johnson H T and Horn G P 2011 Characterization and control of residual stress and curvature in anodically bonded devices and substrates with etched features Exp. Mech. 52 637-48
21. Horn G, Chu Y S, Zhong Y, Mackin T J, Lesniak J R and Reiniger D 2008 Detection and quantification of surface nanotopography-induced residual stress fields in wafer-bonded silicon J. Electrochem. Soc. 155 H36 (Pubitemid 350165978)
22. Stoney G G 1909 The tension of metallic films deposited by electrolysis Proc. R. Soc. Lond. A 82 172-5
23. Wang W-C, Chen Y-M, Lin M-S and Wu C-P 2005 Investigation of the stress field of a near-surface circular hole Exp. Mech. 45 244-9 (Pubitemid 40815507)
24. Hu S M 1991 Stress-related problems in silicon technology J. Appl. Phys. 70 R53
25. Stagni L 2003 Elastic field perturbation by a misfitting ring inclusion Mech. Res. Commun. 30 39-44
26. Huff M A, Nikolich A D and Schmidt M a 1993 Design of sealed cavity microstructures formed by silicon wafer bonding J. Microelectromech. Syst. 2 74-81 (Pubitemid 23703944)
27. Maszara W P 1991 Silicon-on-insulator by wafer bonding: a review J. Electrochem. Soc. 138 341