Photoluminescence imaging for photovoltaic applications

Energy Procedia

Volumn 15, Issue , 2012, Pages 135-146

  Trupke, T ^a,b   Mitchell, B ^b   Weber, J W ^a   McMillan, W ^a   Bardos, R A ^a   Kroeze, R ^a  

^a BT Imaging   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Photoluminescence imaging; Silicon

Indexed keywords

CELL MANUFACTURING; HIGH RESOLUTION; IMAGING APPLICATIONS; INLINE PROCESS MONITORING; MEASUREMENT PRINCIPLE; MINORITY CARRIER LIFETIMES; PHOTOLUMINESCENCE IMAGING; PHOTOVOLTAIC; PHOTOVOLTAIC APPLICATIONS; RESEARCH INSTITUTES; SERIES RESISTANCES; SHORT MEASUREMENT TIME; SILICON SAMPLES; SOLAR CELL PROCESSING; SPATIALLY RESOLVED; STANDARD METHOD; UNIVERSITY OF NEW SOUTH WALES; VALUE CHAINS;

CUTTING; ELECTRIC RESISTANCE; METAL CASTINGS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; PROCESS CONTROL; PROCESS MONITORING; SILICON;

SILICON WAFERS;

EID: 84860543911     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.02.016     Document Type: Conference Paper

References (52)

1. Knoll B. Modules price index. Photon International 2011; 5:124.
2. Würfel P, Finkbeiner S, Daub E. Generalized Planck's radiation law for luminescence via indirect transitions. Appl. Phys. A: Materials Science & Processing 1995; A60:67-70.
3. Schick K, Daub E, Finkbeiner S, Würfel P. Verification of a generalized Planck law for luminescence radiation from silicon solar cells. Appl. Phys. A: Solids and Surfaces 1992; A54: 109-14.
4. Würfel P. Physik der Solarzellen, Berlin: Spektrum Akademischer Verlag, 2000.
5. Trupke T, Bardos RA, Hudert F, Würfel P, Wang A, Zhao J, Green MA. Effective excess carrier lifetimes exceeding 100ms in float zone silicon determined from photoluminescence. Proc. 19th European Photovoltaic Solar Energy Conf., Paris, France; 2004.
6. Fuyuki T, Kondo H, Yamazaki T, Takahashi Y, Uraoka Y. Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence. Appl. Phys. Lett. 2005; 86: 262108.
7. Trupke T, Bardos RA, Schubert MC, Warta W. Photoluminescence imaging of silicon wafers. Appl. Phys. Lett. 2006; 89: 44107.
8. Bardos RA, Trupke T, Schubert MC, Roth R. Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers. Appl. Phys. Lett. 2006; 88: 53504.
9. st IEEE Photovoltaic Specialists Conf., Orlando, Florida; 2005, p. 903-6. (Pubitemid 41667929)
10. Trupke T, Bardos RA, Nyhus J. Photoluminescence characterisation of silicon wafers and solar cells. Proc. 18th Workshop on Crystalline Silicon Solar Cells & Modules, Vail, Colorado; 2008.
11. Herlufsen S, Schmidt J, Hinken D, Bothe K, Brendel R. Photoconductance-calibrated photoluminscence lifetime imaging of crystalline silicon. Phys. Stat. Solidi RRL 2008; 2: 245-7.
12. Giesecke JA, Warta W, Schubert MC, Michl B, Schindler F. Minority carrier lifetime imaging of silicon wafers calibrated by quasi-steady-state photoluminescence. Sol. Energy Mat. Sol. Cells 2011; 95: 1011-8.
13. Trupke T, Bardos RA, Abbott MD. Self Consistent Calibration of photoluminescence and photoconductance lifetime measurements. Appl. Phys. Lett. 2005; 87: 184102.
14. Giesecke JA, Walter D, Kopp F, Rosenits P, Schubert MC, Warta W, Institut F. Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence. Proc. 35th IEEE Photovoltaic Specialists Conf., Honolulu, USA; 2010, p. 847-51.
15. Herlufsen S, Ramspeck K, Hinken D, Schmidt A, Müller J, Bothe K, Schmidt J, Brendel R. Dynamic lifetime imaging based on photoluminescene measurements. Proc. 25th European PV Solar Energy Conf., Valencia, Spain; 2010, p. 2369.
16. Kiliani D, Micard G, Raabe B, Hahn G. Time resolved photoluminescence imaging for carrier lifetime mapping of silicon wafers. Proc. 25th European Photovoltaic Solar Energy Conf., Valencia, Spain; 2010, p.1363.
17. Sinton RA, Trupke T. Limitations on dynamic excess carrier lifetime calibration methods. Prog. Photovolt.: 2011; in press.
18. Sinton RA, Cuevas A, Stuckings M. Quasi-steady-state photoconductance, a new method for solar cell material and device characterisation. Proc. 25th IEEE Photovoltaic Specialists Conf., Washington, USA; 1996, p. 457.
19. Kampwerth H, Trupke T, Weber J, Augarten Y. Advanced luminescence based effective series resistance imaging of silicon solar cells. Appl. Phys. Lett. 2008; 93: 202102.
20. Trupke T, Bardos RA, Abbott MD, Chen FW, Cotter JE, Lorenz A. Fast photoluminescence imaging of silicon wafers. Proc. 4th World Conf. on Photovoltaic Energy Conversion, Waikoloa, USA; 2006, p. 928.
21. Trupke T, Pink E, Bardos RA, Abbott MD. Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging. Appl. Phys. Lett. 2007; 90: 93506.
22. van der Heide ASH, Bultmann JH, Hoornstra J, Schönecker A. Contact resistance measured using the Corescan: relations with cell processing. Proc. 17th European Photovoltaic Solar Energy Conf., Munich, Germany; 2001, p. 1531.
23. Hinken D, Ramspeck K, Bothe K, Fischer B, Brendel R. Series resistance imaging of solar cells by voltage dependent electroluminescence. Appl. Phys. Lett. 2007; 91: 182104.
24. Breitenstein O, Khanna A, Augarten Y, Bauer J, Wagner JM, Iwig K. Quantitative evaluation of electro-luminescence images of solar cells. Phys. Stat. Solidi RRL 2010; 4: 7-9.
25. Haunschild J, Glatthaar M, Kasemann M, Rein S, Weber ER. Fast series resistance imaging for silicon solar cells using electroluminescence. Phys. Stat. Solidi RRL 2009; 3; 227-29.
26. Glatthaar M, Haunschild J, Kasemann M, Giesecke J, Warta W, Rein S. Spatially resolved determination of dark saturation current and series resistance of silicon solar cells. Phys. Stat. Solidi RRL 2010; 4: 135.
27. Ramspeck K, Bothe K, Hinken D, Fischer B, Schmidt J, Brendel R. Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography. Appl. Phys. Lett. 2007; 90: 153502.
28. Würfel P, Trupke T, Puzzer T, Schäffer E, Warta W, Glunz S. Diffusion lengths of silicon solar cells obtained from luminescence images. J. Appl. Phys. 2007; 101: 123110.
29. Giesecke JA, Kasemann M, Schubert MC, Würfel P, Warta W. Separation of local bulk and surface recombination in crystalline silicon from luminescence reabsorption. Prog. Photovolt.: Res. Appl. 2009; 18: 10-19.
30. Trupke T, Mitchell B, Weber JW, Nyhus J. Bulk minority carrier lifeitme from luminescence intensity ratios measured on silicon bricks.Proc. 25th European Photovoltaic Solar Energy Conf., Valencia, Spain; 2010, p. 1307.
31. Mitchell B, Trupke T, Nyhus J, Weber JW. Bulk minority carrier lifetimes and doping of silicon bricks from photo-luminescence intensity ratios. J. Appl. Phys. 2011; 109: 083111.
32. Trupke T, Bardos RA, Abbott MD, Fisher K, Bauer J, Breitenstein O. Luminescence imaging for fast shunt localisation in silicon solar cells and silicon wafers. Proc. Internat'l Workshop on Science and Technology of Crystalline Silicon Solar Cells, Sendai, Japan; 2006.
33. Kasemann M, Grote D, Walter B, Trupke T, Augarten Y, Bardos RA, Pink E, Abbott MD, Warta W. Shunt detection capabilities of luminescence imaging on silicon solar cells. Proc. 22nd European PV Solar Energy Conf., Milan, Italy; 2007.
34. Breitenstein O, Bauer J, Trupke T, Bardos RA. On the detection of shunts in silicon solar cells by photo-and electroluminescence imaging. Prog. Photovolt.: Res. Appl. 2008; 16: 325.
35. Abbott MD, Trupke T, Hartmann HP, Gupta R, Breitenstein O. Laser isolation of shunted regions in industrial soalr cells. Prog. Photovolt.: Res. Appl. 2007; 15: 613.
36. Augarten Y, Trupke T, Lenio M, Bauer J, Breitenstein O, Weber J, Bardos RA. Luminescence shunt imaging: qualitative and quantitative shunt images using photoluminesccence imaging. Proc. 24th European PV Solar Energy Conf., Hamburg, Germany; 2009, p. 27.
37. Macdonald D, Tan J, Trupke T. Imaging interstitial iron concentration in boron-doped crystalline silicon using photo-luminescence. J. Appl. Phys. 2008; 103: 73710.
38. Liu A, Fan YC, Macdonald D. Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging. Prog. Photovolt.: Res. Appl. 2011; vol. online.
39. Habenicht H, Schubert MC, Warta W. Imaging of chromium point defects in p-type silicon. J. Appl. Phys. 2010; 034909.
40. Peloso MP, Hoex B, Aberle AG. Polarization analysis of luminescene for the characterization of silicon wafer solar cells. Appl. Phys. Lett. 2011; 98: 171914.
41. Lausch D, Petter K, von Wenckstern H, Grundmann M. Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells. Phys. Stat. Solidi RRL 2009; 3: 702.
42. Schneemann M, Helbig A, Kirchartz T, Carius R, Rau U. Reverse biased electroluminescence spectroscopy of crystalline silicon solar cells with high spatial resolution. phys. stat. solidi (a) 2010; 207: 2597.
43. Bowden S, Sinton RA. Determining lifetime in silicon blocks and wafers with accurate expressions for carrier density. J. Appl. Phys. 2007; 102: 124501.
44. Swirhun JS, Sinton RA, Forsyth MK, Mankad T. Contactless measurement of minority carrier lifetime in silicon ingots and bricks. Prog. Photovolt.: Res. Appl. 2011; 19: 313-19.
45. Trupke T, Nyhus J, Sinton RA, Weber J. Photoluminescence imaging on silicon bricks. Proc. 24th European Photovoltaic Solar Energy Conf., Hamburg, Germany; 2009, p. 1029.
46. Chunduri SK. No Place to hide-market survey on luminescence imaging systems and cameras. Photon International 2011; 1: 158.
47. Trupke T, Nyhus J, Haunschild J. Luminescence imaging for inline characterisation in silicon photovoltaics. Phys. Stat. Solidi RRL 2011; 5: 131-37.
48. McMillan W, Trupke T, Weber J, Wagner M, Mareck U, Chou YC, Wong J. In-line monitoring of electrical wafer quality using photoluminescence imaging. Proc. 25th European Photovoltaic Solar Energy Conf., Valencia, Spain; 2010, p. 1347.
49. Haunschild J, Glatthaar M, Demant M, Nievendick J, Motzko M, Rein S, Weber E. Quality control of as-cut multicrystal-line silicon wafers using photoluminescene imaging for solar cell production. Sol. En. Mat. Sol. Cells 2010; 94: 2007-2012.
50. Demant M, Glatthaar M, Haunschild J, Rein S. Analysis of luminescence images applying pattern recognition techniques. Proc. 25th European Photovoltaic Solar Energy Conf., Valencia, Spain; 2010, p. 1078.
51. Johnston S, Yan FY, Zaunbrecher K, Al-jassim M, Sidelkheir O, Blosse A. Imaging study of multi-crystalline silicon wafers throughout the manufacturing process. Proc. 37th IEEE Photovoltaic Specialists Conf., Seattle, USA; 2011.
52. Chunduri SK. The quest for quasi. Photon International - The Solar Power Magazine 2011; 6: 260.