Defect monitoring using scanning photoluminescence spectroscopy in multicrystalline silicon wafers

Semiconductor Science and Technology

Volumn 15, Issue 8, 2000, Pages 840-848

  Ostapenko, S ^a   Tarasov, I ^a   Kalejs, J P ^b   Haessler, C ^c   Reisner, E U ^c  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b ASE Americas Inc   (United States)

^c BAYER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); EMISSION SPECTROSCOPY; LIGHT POLARIZATION; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; PRECIPITATION (CHEMICAL); SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON SOLAR CELLS;

BLOCK CASTING; SCANNING INFRARED POLARISCOPY;

SILICON WAFERS;

EID: 0034250353     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/8/310     Document Type: Article

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