Residual stresses in polycrystalline silicon sheet and their relation to electron-hole lifetime

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  He, S ^a   Danyluk, S ^a   Tarasov, I ^b   Ostapenko, S ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLE LIFETIMES; FULL FIELD POLARISCOPY; NEAR INFRARED LIGHT; SURFACE PHOTOVOLTAGE;

LIGHT TRANSMISSION; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; POLARISCOPES; RESIDUAL STRESSES; SURFACE PHENOMENA;

POLYSILICON;

EID: 33748690144     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2354308     Document Type: Article

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