On the residual stress and fracture strength of crystalline silicon wafers

Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

  Yang, Chris ^a   Mess, Frank ^a   Skenes, Kevin ^b   Melkote, Shreyes ^a,b   Danyluk, Steven ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICON WAFERS; DEFECT ORIENTATION; DEFECT SIZE; FULL-FIELD; NEAR INFRARED; SAWING PROCESS; STRENGTH ANISOTROPY; WAFER SURFACE;

CRYSTALLINE MATERIALS; RESIDUAL STRESSES; SAWING; SILICON;

SILICON WAFERS;

EID: 84872731264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4776706     Document Type: Article

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