Large-area 2-D electronics: Materials, technology, and devices

Proceedings of the IEEE

Volumn 101, Issue 7, 2013, Pages 1638-1652

  Hsu, Allen ^a   Wang, Han ^a   Shin, Yong Cheol ^a   Mailly, Benjamin ^a   Zhang, Xu ^a   Yu, Lili ^a   Shi, Yumeng ^b   Lee, Yi Hsien ^a   Dubey, Madan ^c   Kim, Ki Kang ^d   Kong, Jing ^a   Palacios, Tomas ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d Dongguk University   (South Korea)

Author keywords

Boron nitride (BN); circuits; graphene; transistors

Indexed keywords

BORON NITRIDE; FLEXIBLE ELECTRONICS; GRAPHENE TRANSISTORS; III-V SEMICONDUCTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NETWORKS (CIRCUITS); NITRIDES; SULFUR COMPOUNDS; TRANSISTORS;

ELECTRONIC APPLICATION; ELECTRONIC INTEGRATION; FLEXIBLE AND TRANSPARENT ELECTRONICS; HEXAGONAL BORON NITRIDE (H-BN); LAYERED MATERIAL; MOLYBDENUM DISULFIDE; MONOLAYER GRAPHITES; STATE OF THE ART;

GRAPHENE;

EID: 84879883900     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2013.2251311     Document Type: Article

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