Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

Applied Physics Letters

Volumn 103, Issue 6, 2013, Pages

  Lin, Jiadan ^a   Zhong, Jianqiang ^a   Zhong, Shu ^a   Li, Hai ^b   Zhang, Hua ^b   Chen, Wei ^a,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c National University of Singapore   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CHARACTERIZATION; ELECTRON CHARGE; ELECTRONIC TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTOR (FETS); INTERFACIAL INTERACTION; MOLYBDENUM DISULFIDE; MOLYBDENUM TRIOXIDE; SURFACE OVERLAYERS;

DNA SEQUENCES; ELECTRONIC PROPERTIES; MOLYBDENUM OXIDE; PHOTOELECTRONS; TRANSPORT PROPERTIES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

FIELD EFFECT TRANSISTORS;

EID: 84881635389     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818463     Document Type: Article

References (34)

1. S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, ACS Nano 7, 2898 (2013). 10.1021/nn400280c
2. D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, Phys. Rev. Lett. 108, 196802 (2012). 10.1103/PhysRevLett.108.196802
3. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012). 10.1038/nnano.2012.193
4. 2 Monolayers.," Nano Lett. (to be published). 10.1021/nl3026357
5. H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, Small 8, 63 (2012). 10.1002/smll.201101016
6. H. Fang, S. Chuang, T. C. Chang, K. Takei, T. Takahashi, and A. Javey, Nano Lett. 12, 3788 (2012). 10.1021/nl301702r
7. J. Lin, H. Li, H. Zhang, and W. Chen, Appl. Phys. Lett. 102, 203109 (2013). 10.1063/1.4807658
8. Z. Y. Yin, H. Li, H. Li, L. Jiang, Y. M. Shi, Y. H. Sun, G. Lu, Q. Zhang, X. D. Chen, and H. Zhang, ACS Nano 6, 74 (2012). 10.1021/nn2024557
9. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). 10.1038/nnano.2010.279
10. G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, Nano Lett. 12, 526 (2012). 10.1021/nl2044887
11. R. S. Sundaram, M. Engel, A. Lombardo, R. Krupke, A. C. Ferrari, P. Avouris, and M. Steiner, Nano Lett. 13, 1416 (2013).
12. H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, Nano Lett. 12, 3695 (2012). 10.1021/nl301485q
13. J. Kibsgaard, Z. B. Chen, B. N. Reinecke, and T. F. Jaramillo, Nature Mater. 11, 963 (2012). 10.1038/nmat3439
14. T. F. Jaramillo, K. P. Jorgensen, J. Bonde, J. H. Nielsen, S. Horch, and I. Chorkendorff, Science 317, 100 (2007). 10.1126/science.1141483
15. X. Zong, G. P. Wu, H. J. Yan, G. J. Ma, J. Y. Shi, F. Y. Wen, L. Wang, and C. Li, J. Phys. Chem. C 114, 1963 (2010). 10.1021/jp904350e
16. Q. Xiang, J. Yu, and M. Jaroniec, J. Am. Chem. Soc. 134, 6575 (2012). 10.1021/ja302846n
17. F. Y. Cheng, J. Chen, and X. L. Gou, Adv. Mater. 18, 2561 (2006). 10.1002/adma.200600912
18. M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, Appl. Phys. Lett. 100, 153901 (2012). 10.1063/1.3703602
19. W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang, and X. Duan, Nature Mater. 12, 246 (2013). 10.1038/nmat3518
20. H. Fang, M. Tosun, G. Seol, T. C. Chang, K. Takei, J. Guo, and A. Javey, Nano Lett. 13, 1991 (2013). 10.1021/nl400044m
21. X. Dong, D. Fu, W. Fang, Y. Shi, P. Chen, and L.-J. Li, Small 5, 1422 (2009). 10.1002/smll.200801711
22. L. Xie, X. Wang, H. Mao, R. Wang, M. Ding, Y. Wang, B. Ozyilmaz, K. P. Loh, A. T. S. Wee, Ariando, Appl. Phys. Lett. 99, 012112 (2011). 10.1063/1.3609318
23. Z. Liu, A. A. Bol, and W. Haensch, Nano Lett. 11, 523 (2011). 10.1021/nl1033842
24. T. J. Echtermeyer, L. Britnell, P. K. Jasnos, A. Lombardo, R. V. Gorbachev, A. N. Grigorenko, A. K. Geim, A. C. Ferrari, and K. S. Novoselov, Nat. Commun. 2, 458 (2011). 10.1038/ncomms1464
25. W. Chen, S. Chen, D. C. Qi, X. Y. Gao, and A. T. S. Wee, J. Am. Chem. Soc. 129, 10418 (2007). 10.1021/ja071658g
26. H. L. Zhang, W. Chen, L. Chen, H. Huang, X. S. Wang, J. Yuhara, and A. T. S. Wee, Small 3, 2015 (2007). 10.1002/smll.200700381
27. D. M. Guldi, B. M. Illescas, C. M. Atienza, M. Wielopolski, and N. Martin, Chem. Soc. Rev. 38 (6), 1587 (2009). 10.1039/b900402p
28. Y. Zhao, J. Chen, W. Chen, and D. Ma, J. Appl. Phys. 111, 043716 (2012). 10.1063/1.3687933
29. Z. Chen, I. Santoso, R. Wang, L. F. Xie, H. Y. Mao, H. Huang, Y. Z. Wang, X. Y. Gao, Z. K. Chen, D. Ma, Appl. Phys. Lett. 96, 213104 (2010). 10.1063/1.3441263
30. L. Chen, W. Chen, H. Huang, H. L. Zhang, J. Yuhara, and A. T. S. Wee, Adv. Mater. 20, 484 (2008). 10.1002/adma.200701384
31. H. Y. Mao, R. Wang, H. Huang, Y. Z. Wang, X. Y. Gao, S. N. Bao, A. T. S. Wee, and W. Chen, J. Appl. Phys. 108, 053706 (2010). 10.1063/1.3475716
32. M. Irimia-Vladu, N. Marjanovic, A. Vlad, A. M. Ramil, G. Hernandez-Sosa, R. Schwoödiauer, S. Bauer, and N. S. Sariciftci, Adv. Mater. 20, 3887 (2008). 10.1002/adma.200801024
33. D. Zhao, T. Chen, and L. Wang, Appl. Phys. Lett. 66, 3292 (1995). 10.1063/1.113734
34. K. Mak, C. Lee, J. Hone, J. Shan, and T. Heinz, Phys. Rev. Lett. 105, 136805 (2010). 10.1103/PhysRevLett.105.136805