Direct band-to-band tunneling in reverse biased MoS2nanoribbon p-n junctions

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 274-279

  Ghosh, Ram Krishna ^a   Mahapatra, Santanu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

band to band tunneling (BTBT); Bandgap; complex band structure; nanoribbon; strain

Indexed keywords

BAND TO BAND TUNNELING; BI-LAYER; COMPLEX BAND STRUCTURES; COMPRESSIVE STRAIN; GRAPHENE NANO-RIBBON; MOLYBDENUM DISULFIDE; NANORIBBONS; P-N JUNCTION; REVERSE BIAS; SEMI-EMPIRICAL; STRAINED CONDITION; TUNNELING CURRENT; TUNNELING PROBABILITIES; UNIAXIAL TENSILE; UNIAXIAL TENSILE STRAIN;

BAND STRUCTURE; ELECTRON TUNNELING; ENERGY GAP; FIELD EFFECT TRANSISTORS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; MONOLAYERS; SEMICONDUCTOR JUNCTIONS; STRAIN;

NANOSTRUCTURES;

EID: 84871763071     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2226729     Document Type: Article

References (34)

1. J. Appenzeller, Y. M. Lin, J. Knoch, and P. Avouris, "Band-to-band tunneling in carbon nanotube field-effect transistors, " Phys. Rev. Lett., vol. 93, no. 19, pp. 196805-1-196805-4, Nov. 2004.
2. J. Appenzeller, Y. Lin, J. Knoch, Z. Chen, and P. Avouris, "Comparing carbon nanotube transistors-The ideal choice: A novel tunneling device design, " IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2568-2576, Dec. 2005. (Pubitemid 41824835)
3. A. M. Ionescu and H. Riel, "Tunnel field-effect transistors as energyefficient electronic switches, " Nature, vol. 479, no. 7373, pp. 329-237, Nov. 2011.
4. M. T. Björk, J. Knoch, H. Schmid, H. Riel, and W. Riess, "Silicon nanowire tunneling field-effect transistors, " Appl. Phys. Lett., vol. 92, no. 19, pp. 193504-1-193504-3, May 2008.
5. A. Schenk, "Rigorous theory and simplified model of the band-to-band tunneling in silicon, " Solid State Electron., vol. 36, no. 1, pp. 19-34, Jan. 1993. (Pubitemid 23620502)
6. S. Mookerjea, D. Mohata, R. Krishnan, J. Singh, A. Vallett, A. Ali, T. Mayer, V. Narayanan, D. Schlom, A. Liu, and S. Datta, "Experimental demonstration of 100 nm channel length In0. 53Ga0. 47As-based vertical inter-band tunnel field effect transistors (TFET) for ultra low-power logic and SRAM applications, " in Proc. IEEE Int. Electron Devices Meeting, 2009, pp. 1-3.
7. P. Zhao, J. Chauhan, and J. Guo, "Computational study of tunneling transistor based on graphene nanoribbon, " Nano Lett., vol. 9, no. 2, pp. 684-688, Feb. 2009.
8. Y. W. Son, M. L. Cohen, and S. G. Louie, "Energy gaps in graphene nanoribbons, " Phys. Rev. Lett., vol. 97, no. 21, pp. 216803-1-216803-4, Nov. 2006.
9. H. Raza and E. C. Kan, "Armchair graphene nanoribbons: Electronic structure and electric-field modulation, " Phys. Rev. B, Condens. Matter, vol. 77, no. 24, pp. 245434-1-245434-5, Jun. 2008.
10. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, "Single-layer MoS2 transistors, " Nat. Nanotechnol., vol. 6, no. 3, pp. 147-150, Mar. 2011.
11. B. Radisavljevic, M. B. Whitwick, and A. Kis, "Integrated circuits and logic operations based on single-layer MoS2, " ACS Nano, vol. 5, no. 12, pp. 9934-9938, Dec. 2011.
12. Y. Yoon, K. Ganapathi, and S. Salahuddin, "How good can monolayer MoS2 transistors be?" Nano Lett., vol. 11, no. 9, pp. 3768-73, Sep. 2011.
13. K. Mak, C. Lee, J. Hone, J. Shan, and T. Heinz, "Atomically thin MoS2: A new direct-gap semiconductor, " Phys. Rev. Lett., vol. 105, no. 13, pp. 136805-1-136805-4, Sep. 2010.
14. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, "Emerging photoluminescence in monolayer MoS2, " Nano Lett., vol. 10, no. 4, pp. 1271-1275, Apr. 2010.
15. Y. Li, Z. Zhou, S. Zhang, and Z. Chen, "MoS2 nanoribbons: High stability and unusual electronic and magnetic properties, " J. Amer. Chem. Soc., vol. 130, no. 49, pp. 16 739-16 744, Dec. 2008.
16. C. Ataca, H. Sahin, E. Aktürk, and S. Ciraci, "Mechanical and electronic properties of MoS2 nanoribbons and their defects, " J. Phys. Chem. C, vol. 115, no. 10, pp. 3934-3941, Mar. 2011.
17. Q. Yue, S. Chang, J. Kang, X. Zhang, Z. Shao., S. Qin, and J. Li, "Bandgap tuning in armchair MoS2 nanoribbon, " J. Phys.: Condens. Matt., vol. 24, no. 33, pp. 335501-1-335501-7, Aug. 2012.
18. QuantumWise Simulator, Atomistix ToolKit (ATK). [Online]. Available: http://www. quantumwise. com/
19. M. Luisier and G. Klimeck, "Simulation of nanowire tunneling transistors: From the Wentzel-Kramers-Brillouin approximation to fullband phonon-assisted tunneling, " J. Appl. Phys., vol. 107, no. 8, pp. 084507-1-084507-6, Apr. 2010.
20. R. K. Pandey, K. V. R. M. Murali, S. S. Furkay, P. J. Oldiges, and E. J. Nowak, "Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs, " IEEE Trans. Electron Devices, vol. 57, no. 9, pp. 2098-2105, Sep. 2010.
21. D. Kienle, J. I. Cerda, and A. W. Ghosh, "Extended Hückel theory for band structure, chemistry and transport. I. Carbon nanotubes, " J. Appl. Phys., vol. 100, no. 4, pp. 043714-1-043714-9, Aug. 2006.
22. J. Cerda and F. Soria, "Accurate and transferable extended Hückel-type tight-binding parameters, " Phys. Rev. B, vol. 61, no. 12, pp. 7965-7971, Mar. 2000.
23. P. Pulay, "Convergence acceleration of iterative sequences the case of SCF iteration, " Chem. Phys. Lett., vol. 73, no. 2, pp. 393-398, Jul. 1980.
24. International Technology Roadmap for Semiconductors. [Online]. Available: http://www. itrs. net/Links/2009ITRS/2009Chapters-2009Tables/2009-ExecSum. pdf
25. Y. Sun, S. E. Thompson, and T. Nishida, Strain Effect in Semiconductors: Theory and Device Applications. New York: Springer-Verlag, 2010.
26. Z. H. Ni, T. Yu, Y. H. Lu, Y. Y. Wang, Y. P. Feng, and Z. X. Shen, "Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening, " ACS Nano, vol. 2, no. 11, pp. 2301-2305, Nov. 2008.
27. K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, "Large-scale pattern growth of graphene films for stretchable transparent electrodes, " Nature, vol. 457, no. 7230, pp. 706-710, Feb. 2009.
28. J. Kang, Y. He, J. Zhang, and X. Yu, "Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors, " Appl. Phys. Lett., vol. 96, no. 25, pp. 252105-1-252105-3, Jun. 2010.
29. X. Guan, D. Kim, K. C. Saraswat, and H.-S. P. Wong, "Complex band structures: From parabolic to elliptic approximation, " IEEE Electron Device Lett., vol. 32, no. 9, pp. 1296-1298, Sep. 2011.
30. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. Hoboken, NJ: Wiley, 2007.
31. K. H. Kao, A. S. Verhulst, W. G. Vandenberghe, B. Soree, G. Groeseneken, and K. D. Meyer, "Direct and indirect band-to-band tunneling in germanium-based TFETs, " IEEE Trans. Electron Devices, vol. 59, no. 2, pp. 292-301, Feb. 2012.
32. M. A. Khayer and R. K. Lake, "Drive currents and leakage currents in InSb and InAs nanowire and carbon nanotube band-to-band tunneling FETs, " IEEE Electron Device Lett., vol. 30, no. 12, pp. 1257-1259, Dec. 2009.
33. D. Jena, T. Fang, Q. Zhang, and H. Xing, "Zener tunneling in semiconducting nanotube and graphene nanoribbon p-n junctions, " Appl. Phys. Lett., vol. 93, no. 11, pp. 112106-1-112106-3, Sep. 2008.
34. Y. Ouyang, H. J. Dai, and J. Guo, "Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material, " Nano Res., vol. 3, no. 1, pp. 8-15, Jan. 2010.