Control of electronic structure of graphene by various dopants and their effects on a nanogenerator

Journal of the American Chemical Society

Volumn 132, Issue 44, 2010, Pages 15603-15609

  Shin, Hyeon Jin ^a,b   Choi, Won Mook ^a   Choi, Dukhyun ^a,c   Han, Gang Hee ^b   Yoon, Seon Mi ^a   Park, Hyun Kyu ^d   Kim, Sang Woo ^d   Jin, Yong Wan ^a   Lee, Sang Yoon ^a   Kim, Jong Min ^a   Choi, Jae Young ^a   Lee, Young Hee ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Kyung Hee University   (South Korea)

^d Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH WORK FUNCTION; LOW WORK FUNCTION; OFF-CURRENT; REDUCTION POTENTIAL; SCHOTTKY BARRIER HEIGHTS; SHEET CARRIER DENSITIES; VIOLOGENS;

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GOLD; GRAPHITE ELECTRODES; NANOTECHNOLOGY; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; WORK FUNCTION;

GRAPHENE;

GOLD; GOLD CHLORIDE; GRAPHENE; NANOGENERATOR; NANOMATERIAL; UNCLASSIFIED DRUG; VIOLOGEN;

ARTICLE; CHEMICAL STRUCTURE; CONTROLLED STUDY; DENSITY; ELECTRIC CURRENT; ELECTRICITY; ELECTRODE; FILM; GENERATOR; REDUCTION; SYNTHESIS; VAPOR;

EID: 78149269809     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja105140e     Document Type: Article

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