Modulating the morphology and electrical properties of GaAs nanowires via catalyst stabilization by oxygen

ACS Applied Materials and Interfaces

Volumn 7, Issue 9, 2015, Pages 5591-5597

  Han, Ning ^a,b   Yang, Zaixing ^b   Wang, Fengyun ^c   Yip, Senpo ^b   Dong, Guofa ^b   Liang, Xiaoguang ^b   Hung, Takfu ^b   Chen, Yunfa ^a   Ho, Johnny C ^b  

^a INSTITUTE OF PROCESS ENGINEERING   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c QINGDAO UNIVERSITY   (China)

Author keywords

CMOS inverter; diameter control; electronic property; GaAs nanowire; oxygen

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; FILM GROWTH; GALLIUM ARSENIDE; GOLD NANOPARTICLES; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; METAL WORKING; MORPHOLOGY; MOS DEVICES; NANOCATALYSTS; NANOWIRES; OSTWALD RIPENING; OXIDE SEMICONDUCTORS; OXYGEN; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM PHOSPHIDE; THIN FILMS;

CATALYST STABILIZATION; CMOS INVERTERS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DIAMETER CONTROL; GAAS NANOWIRES; LARGE SCALE SYNTHESIS; RELATIVE STANDARD DEVIATIONS; THIN FILM FIELD EFFECT TRANSISTORS;

GOLD;

EID: 84924598906     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b00666     Document Type: Article

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