Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions

Nano Letters

Volumn 11, Issue 11, 2011, Pages 4947-4952

  Dai, Xing ^a   Dayeh, Shadi A ^b   Veeramuthu, Vaithianathan ^a   Larrue, Alexandre ^d   Wang, Jian ^c   Su, Haibin ^a,d   Soci, Cesare ^a,d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

^d RESEARCH TECHNO PLAZA   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DENSE ARRAYS; ELECTROSTATIC ENERGIES; GAAS; JUNCTION FORMATION; MECHANICAL ENERGIES; NANOWIRE DEVICES; NANOWIRE JUNCTIONS; POINT OF CONTACT; POLAR SURFACES; T JUNCTIONS; VAPOR-LIQUID-SOLID GROWTH;

ELECTROSTATICS; GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

GALLIUM; GALLIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; GAS; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SOLUTION AND SOLUBILITY; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; GALLIUM; GASES; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SOLUTIONS; SURFACE PROPERTIES;

EID: 80755142773     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202888e     Document Type: Article

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