Catalyst preparation for CMOS-compatible silicon nanowire synthesis

Nature Nanotechnology

Volumn 4, Issue 10, 2009, Pages 654-657

  Renard, Vincent T ^a   Jublot, Michael ^a   Gergaud, Patrice ^a   Cherns, Peter ^a   Rouchon, Denis ^a   Chabli, Amal ^a   Jousseaume, Vincent ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COPPER; MOS DEVICES; NANOWIRES; OXIDE SEMICONDUCTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

CATALYST PREPARATION; COPPER-BASED CATALYSTS; MATERIAL COMPATIBILITY; MAXIMUM TEMPERATURE; METALLIC CONTAMINATION; SEMICONDUCTOR INDUSTRY; SEMICONDUCTOR NANOWIRE; SYNTHESIS TEMPERATURES;

NANOCATALYSTS;

COPPER; NANOWIRE; OXYGEN; SILICON;

ARTICLE; CATALYST; CHEMICAL ANALYSIS; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR; CONTROLLED STUDY; OXIDATION; PRIORITY JOURNAL; SEMICONDUCTOR; STRUCTURE ANALYSIS; SYNTHESIS; TEMPERATURE MEASUREMENT;

EID: 70350689539     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2009.234     Document Type: Article

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