Large-scale and uniform preparation of pure-phase wurtzite GaAs NWs on non-crystalline substrates

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Han, Ning ^a   Hou, Jared J ^a   Wang, Fengyun ^a   Yip, SenPo ^a   Lin, Hao ^a   Fang, Ming ^a   Xiu, Fei ^a   Shi, Xiaoling ^a   Hung, TakFu ^a   Ho, Johnny C ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

GaAs nanowires; Non crystalline substrates; P type semiconductors; Wurtzite phase

Indexed keywords

ASPECT RATIO; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; ZINC SULFIDE;

CRYSTALLINE SUBSTRATES; DIAMETER DISTRIBUTIONS; GAAS NANOWIRES; P TYPE SEMICONDUCTOR; PREPARATION TECHNOLOGY; SURFACE ENERGY DIFFERENCES; THERMODYNAMICALLY STABLE; WURTZITE PHASE;

SUBSTRATES;

EID: 84871226043     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-632     Document Type: Article

References (35)

1. Gudiksen MS, Lauhon LJ, Wang J, Smith DC, Lieber CM: Growth of nanowire superlattice structures for nanoscale photonics and electronics. Nature 2002, 415:617-620.
2. Yoon J, Jo S, Chun IS, Jung I, Kim HS, Meitl M, Menard E, Li XL, Coleman JJ, Paik U, Rogers JA: GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies. Nature 2010, 465:329-334.
3. Hou JJ, Han N, Wang F, Xiu F, Yip S, Hui AT, Hung T, Ho JC: Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for highperformance electronic devices. ACS Nano 2012, 6:3624-3630.
4. del Alamo JA: Nanometer-scale electronics with III-V compound semiconductors. Nature 2011, 479:317-323.
5. Dick KA, Caroff P, Bolinsson J, Messing ME, Johansson J, Deppert K, Wallenberg LR, Samuelson L: Control of III-V nanowire crystal structure by growth parameter tuning. Semicond Sci Technol 2010, 25:024009.
6. Joyce HJ, Wong-Leung J, Gao Q, Tan HH, Jagadish C: Phase perfection in zinc blende and wurtzite III-V nanowires using basic growth parameters. Nano Lett 2010, 10:908-915.
7. Krogstrup P, Popovitz-Biro R, Johnson E, Madsen MH, Nygård J, Shtrikman H: Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111). Nano Lett 2010, 10:4475-4482.
8. Persson AI, Larsson MW, Stenstrom S, Ohlsson BJ, Samuelson L, Wallenberg LR: Solidphase diffusion mechanism for GaAs nanowire growth. Nat Mater 2004, 3:677-681.
9. Plante MC, LaPierre RR: Control of GaAs nanowire morphology and crystal structure. Nanotechnology 2008, 19:495603.
10. Caroff P, Dick K, Johansson J, Messing M, Deppert K, Samuelson L: Controlled polytypic and twin-plane superlattices in III-V nanowires. Nat Nanotechnol 2008, 4:50-55.
11. Pankoke V, Kratzer P, Sakong S: Calculation of the diameter-dependent polytypism in GaAs nanowires from an atomic motif expansion of the formation energy. Phys Rev B 2011, 84:075455.
12. Shtrikman H, Popovitz-Biro R, Kretinin A, Houben L, Heiblum M, Bukała M, Galicka M, Buczko R, Kacman P: Method for suppression of stacking faults in wurtzite III-V nanowires. Nano Lett 2009, 9:1506-1510.
13. Thelander C, Caroff P, Plissard S, Dey AW, Dick KA: Effects of crystal phase mixing on the electrical properties of InAs nanowires. Nano Lett 2011, 11:2424-2429.
14. Wallentin J, Ek M, Wallenberg LR, Samuelson L, Borgstrom MT: Electron trapping in InP nanowire FETs with stacking faults. Nano Lett 2012, 12:151-155.
15. Schroer MD, Petta JR: Correlating the nanostructure and electronic properties of InAs nanowires. Nano Lett 2010, 10:1618-1622.
16. Dhaka V, Haggren T, Jussila H, Jiang H, Kauppinen E, Huhtio T, Sopanen M, Lipsanen H: High quality GaAs nanowires grown on glass substrates. Nano Lett 2012, 12:1912-1918.
17. Han N, Wang FY, Hui AT, Hou JJ, Shan GC, Xiu F, Hung TF, Ho JC: Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates. Nanotechnology 2011, 22:285607.
18. Fan ZY, Ho JC, Takahashi T, Yerushalmi R, Takei K, Ford AC, Chueh YL, Javey A: Toward the development of printable nanowire electronics and sensors. Adv Mater 2009, 21:3730-3743.
19. Akiyama T, Haneda Y, Nakamura K, Ito T: Role of the Au/GaAs (111) interface on the wurtzite-structure formation during GaAs nanowire growth by a vapor-liquid-solid mechanism. Phys Rev B 2009, 79:153406.
20. Dick KA: A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III-V nanowires. Prog Cryst Growth Charact Mater 2008, 54:138-173.
21. Wacaser BA, Dick KA, Johansson J, Borgstrom MT, Deppert K, Samuelson L: Preferential interface nucleation: an expansion of the VLS growth mechanism for nanowires. Adv Mater 2009, 21:153-165.
22. Han N, Wang F, Hou JJ, Xiu F, Yip S, Hui AT, Hung T, Ho JC: Controllable p-n switching behaviors of GaAs nanowires via an interface effect. ACS Nano 2012, 6:4428-4433.
23. Johansson J, Dick K, Caroff P, Messing M, Bolinsson J, Deppert K, Samuelson L: Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires. J PhysChem C 2010, 114:3837-3842.
24. Akiyama T, Sano K, Nakamura K, Ito T: An empirical potential approach to wurtzitezinc-blende polytypism in group III-V semiconductor nanowires. Jpn J Appl Phys 2006, 45:L275-L278.
25. Dubrovskii V, Sibirev N: Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires. Phys Rev B 2008, 77:035414.
26. Zhang GQ, Tateno K, Sanada H, Tawara T, Gotoh H, Nakano H: Synthesis of GaAs nanowires with very small diameters and their optical properties with the radial quantum-confinement effect. Appl Phys Lett 2009, 95:123104.
27. De A, Pryor CE: Predicted band structures of III-V semiconductors in the wurtzite phase. Phys Rev B 2010, 81:155210.
28. Zanolli Z, Fuchs F, Furthmüller J, von Barth U, Bechstedt F: Model GW band structure of InAs and GaAs in the wurtzite phase. Phys Rev B 2007, 75:245121.
29. Guo H, Wen L, Li X, Zhao Z, Wang Y: Analysis of optical absorption in GaAs nanowire arrays. Nanoscale Res Lett 2011, 6:1-6.
30. Benyoucef M, Rastelli A, Schmidt O, Ulrich S, Michler P: Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots. Nanoscale Res Lett 2006, 1:172-176.
31. Murayama M, Nakayama T: Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces. Phys Rev B 1994, 49:4710.
32. 3-GaAs structures fabricated by in situ molecular beam epitaxy. Appl Phys Lett 1996, 68:1099.
33. Jabeen F, Rubini S, Martelli F, Franciosi A, Kolmakov A, Gregoratti L, Amati M, Barinov A, Goldoni A, Kiskinova M: Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires. Nano Research 2010, 3:706-713.
34. Lide DR: CRC Handbook of Chemistry and Physics. Boca Raton: CRC Press; 1993.
35. Mead CA: Metal-semiconductor surface barriers. Solid State Electron 1966, 9:1023-1033.