Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors

Applied Surface Science

Volumn 313, Issue , 2014, Pages 382-388

  Yoo, Sungmi ^a,b   Yoon, Jun Young ^a,b   Ryu, Juwhan ^b   Kim, Yun Ho ^a   Ka, Jae Won ^a   Yi, Mi Hye ^a   Jang, Kwang Suk ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

Polymer dielectric; Polymer gate insulator; Surface modification; ZnO thin film transistor

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANNEALING; FIELD EFFECT TRANSISTORS; FILM PREPARATION; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; POLYIMIDES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SURFACE TREATMENT; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ELECTRICAL INSULATING PROPERTIES; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; POLYMER DIELECTRICS; POLYMER GATE INSULATOR; SOLUTION-PROCESSED; ZNO SEMICONDUCTORS; ZNO THIN FILM;

THIN FILM TRANSISTORS;

EID: 84904811457     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.05.217     Document Type: Article

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