SCOPUS 정보 검색 플랫폼

Volumn 2, Issue 12, 2014, Pages 2191-2197

A high-temperature resistant polyimide gate insulator surface-modified with a YOx interlayer for high-performance, solution-processed Li-doped ZnO thin-film transistors

(6) Yoon, Jun Young a,b Kim, Yun Ho a Ka, Jae Won a Hong, Sung Kwon b Yi, Mi Hye a Jang, Kwang Suk a

a Korea Research Institute of Chemical Technology (South Korea)

b Chungnam National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AROMATIC POLYIMIDES; ELECTRICAL INSULATING PROPERTIES; FIELD-EFFECT MOBILITIES; HIGH-TEMPERATURE RESISTANT; INSULATING PROPERTIES; METAL OXIDE THIN-FILM TRANSISTORS; SOLUTION-PROCESSED; THIN-FILM TRANSISTOR (TFTS);

ELECTRIC PROPERTIES; LITHIUM; POLYMERIC FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; ZINC OXIDE;

POLYIMIDES;

EID: 84896857845 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c3tc31890g Document Type: Article

Times cited : (20)

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