Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations

Semiconductor Science and Technology

Volumn 25, Issue 10, 2010, Pages

  Lee, C Y ^a   Lin, M Y ^a   Wu, W H ^a   Wang, J Y ^a   Chou, Y ^a   Su, W F ^a   Chen, Y F ^a   Lin, C F ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MORPHOLOGY; DIELECTRIC LAYER; ELECTRICAL CHARACTERISTIC; FLEXIBLE SUBSTRATE; HIGH FIELD; O2-PLASMA TREATMENT; SOLUTION CONCENTRATION; SOLUTION-PROCESSED; TRANSPARENT THIN FILM TRANSISTOR; TRAP CENTER; ZNO; ZNO ACTIVE LAYERS;

MORPHOLOGY; PLASMA APPLICATIONS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78649980492     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/10/105008     Document Type: Article

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