Low-Temperature, aqueous-solution-processed zinc tin oxide thin film transistor

Japanese Journal of Applied Physics

Volumn 50, Issue 7 PART 1, 2011, Pages

  Park, Jee Ho ^a   Choi, Won Jin ^a,d   Oh, Jin Young ^a   Chae, Soo Sang ^a   Jang, Woo Soon ^a   Lee, Se Jong ^b   Song, Kie Moon ^c   Baik, Hong Koo ^a  

^a Yonsei University   (South Korea)

^b Kyungsung University   (South Korea)

^c Konkuk University   (South Korea)

^d Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ANNEALING TEMPERATURES; DEVICE PERFORMANCE; ENHANCEMENT MODES; HIGH TRANSPARENCY; LOW TEMPERATURES; METAL HYDROXIDE; ON/OFF CURRENT RATIO; SMOOTH SURFACE; SOLUTION-PROCESSED; SUBTHRESHOLD SLOPE; ZINC TIN OXIDE;

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; THIN FILM DEVICES; TIN; TIN OXIDES; X RAY DIFFRACTION; ZINC;

THIN FILM TRANSISTORS;

EID: 79960695225     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.070201     Document Type: Article

References (21)

1. D. Zhao et al.: J. Electron. Mater. 39 (2010) 554.
2. Y. L. Wang et al.: Appl. Phys. Lett. 90 (2007) 232103.
3. S. Ferrari et al.: Appl. Phys. Lett. 92 (2008) 023502.
4. C.-K. Chen et al.: J. Disp. Technol. 5 (2009) 509.
5. D. H. Lee et al.: J. Mater. Chem. 19 (2009) 3135.
6. M. Ohyama et al.: Thin Solid Films 306 (1997) 78.
7. W. H. Jeong et al.: Appl. Phys. Lett. 96 (2010) 093503.
8. S.-Y. Han et al.: J. Disp. Technol. 5 (2009) 520.
9. G. H. Kim et al.: Appl. Phys. Lett. 96 (2010) 163506.
10. S. J. Seo et al.: J. Phys. D 42 (2009) 035106.
11. J. H. Lim et al.: Appl. Phys. Lett. 95 (2009) 012108.
12. C. G. Choi et al.: Electrochem. Solid-State Lett. 11 (2008) H7.
13. K. Nomura et al.: Nature 432 (2004) 25.
14. L. L. Hench and J. K. West: Chem. Rev. 90 (1990) 33.
15. E. W. Giesekke et al.: Inorg. Chem. 6 (1967) 1294.
16. D. K. Schroder: Semiconductor Material and Device Characterization Wiley, New York, 2006) Chap. 8.
17. D. K. Schroder: Semiconductor Material and Device Characterization Wiley, New York, 2006) Chap. 6.
18. J. H. Jeong et al.: Electrochem. Solid-State Lett. 11 (2008) H157.
19. H. S. Shin et al.: Jpn. J. Appl. Phys. 49 (2010) 03CB01.
20. G. H. Kim et al.: Appl. Phys. Lett. 94 (2009) 233501.
21. H. Z. Zhang et al.: Solid-State Electron. 54 (2010) 479.