Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors

ACS Applied Materials and Interfaces

Volumn 5, Issue 7, 2013, Pages 2585-2592

  Lee, Keun Ho ^a   Park, Jee Ho ^a   Yoo, Young Bum ^a   Jang, Woo Soon ^a   Oh, Jin Young ^a   Chae, Soo Sang ^a   Moon, Kyeong Ju ^a   Myoung, Jae Min ^a   Baik, Hong Koo ^a  

^a Yonsei University   (South Korea)

Author keywords

dielectric constant; effects of solution temperature; ion pairing; metal oxide thin film transistors; solution processed; solvation

Indexed keywords

ELECTRON CONDUCTION; FIELD-EFFECT MOBILITIES; ION PAIRING; METAL OXIDE THIN-FILM TRANSISTORS; PRECURSOR SOLUTIONS; SOLUTION TEMPERATURE; SOLUTION-PROCESSED; THIN-FILM TRANSISTOR (TFTS);

ANNEALING; CONDENSATION REACTIONS; FABRICATION; METALLIC COMPOUNDS; METALS; PERMITTIVITY; POSITIVE IONS; SOLVATION; THIN FILMS; ZINC;

THIN FILM TRANSISTORS;

EID: 84876108890     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am3032629     Document Type: Article

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