Spatial atmospheric atomic layer deposition of alxzn1-xo

ACS Applied Materials and Interfaces

Volumn 5, Issue 24, 2013, Pages 13124-13128

  Illiberi, A ^a   Scherpenborg, R ^a   Wu, Y ^b   Roozeboom, F ^a,b   Poodt, P ^a  

^a HOLST CENTRE   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Aluminum oxide; Atmospheric pressure; Atomic layer deposition; Multicomponent oxide; Transparent conductive oxides; Zinc oxide

Indexed keywords

ALUMINUM OXIDES; DOPING EFFICIENCY; HIGH DEPOSITION RATES; METAL PRECURSOR; MULTI-COMPONENT OXIDES; OPTICAL TRANSPARENCY; TRANSPARENT CONDUCTIVE OXIDES; TRIMETHYL ALUMINUMS;

ALUMINUM; ALUMINUM COATINGS; AMORPHOUS FILMS; AMORPHOUS MATERIALS; ATMOSPHERIC PRESSURE; CONDUCTIVE FILMS; DEPOSITION; ELECTRIC PROPERTIES; MORPHOLOGY; SEMICONDUCTOR DOPING; ZINC; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84891393366     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am404137e     Document Type: Article

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